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机译:Mn掺杂GeTe相变材料的厚度依赖性和磁化行为
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China,Wuhan National Laboratory for Optoelectronics, Wuhan 430074, China,Faculty of Science and Technology, Alneelain University, Khartoum 11121, Sudan;
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China,Wuhan National Laboratory for Optoelectronics, Wuhan 430074, China;
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China,Wuhan National Laboratory for Optoelectronics, Wuhan 430074, China;
机译:Mn掺杂的GeTe硫族化物磁性材料中的相变铁磁调制
机译:GeTe / Sb_2Te_3超晶格相变材料的开关特性对电脉冲宽度和光偏振方向的依赖性
机译:不同厚度的FeSi材料的磁化行为的频率依赖性
机译:用于高频应用的GeTe相变材料的光开关
机译:金属上的相变材料:结晶行为及其在磁性叠层中的应用。
机译:零密度变化相变存储材料:结晶后的GeTe-O结构特征
机译:纳米级结构相变:相变材料Ge2Sb2Te5和GeTe中的关键模式