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机译:不同退火温度下溅射Cu(In,Ga)Se_2薄膜的表面演变
School of Physics, Beijing Institute of Technology, Beijing 100081, China,Institut des Materiaux Jean Rouxel (IMN), Universite de Nantes, UMR CNRS 6502, 44322 Nantes, France;
School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China;
School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China;
School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China;
School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China;
School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China;
College of Materials Science and Engineering, Hunan University, Changsha 410082, China,Institut des Materiaux Jean Rouxel (IMN), Universite de Nantes, UMR CNRS 6502, 44322 Nantes, France;
Institut des Materiaux Jean Rouxel (IMN), Universite de Nantes, UMR CNRS 6502, 44322 Nantes, France;
机译:退火温度对射频溅射Cu(In,Ga)Se_2薄膜性能的影响
机译:射频溅射制备的不同温度退火Cu(In,Ga)Se_2和Cu(In,Ga)_2Se_(3.5)薄膜的性能
机译:溅射沉积Cu-In-Ga-Se前驱体的无Se快速热退火制备的Cu(In,Ga)Se_2薄膜太阳能电池中的效率限制因素
机译:溅射金属Cu-in-Ga前体Se / Ar气氛硒化期间SE_2薄膜演进期间
机译:氢退火和衬底温度对射频溅射氧化锌薄膜性能的影响
机译:通过共溅射和溅射气体聚集获得的CO-Cu薄膜的磁传输性能
机译:通过溅射和共蒸发沉积的Cu(In,Ga)Se_2薄膜的强度,刚度和微观结构