Fabrication and characterization of ZnSe thin films based low-cost dye sensitized solar cells

摘要

n-ZnSe thin films were prepared by a simple chemical bath deposition method using glass and ITO substrates in an aqueous alkaline medium. AFM and SEM studies confirmed that annealing film improved the grain growth and the distribution over the entire surface of the film. Raman spectroscopic studies revealed two longitudinal optical modes at 243 and 252 cm~(-1), which indicate cubic structure of ZnSe thin film. The optical energy band gap (E_g) calculated from the optical absorption was observed around 2.77 eV for as deposited films, which reduced to 2.64 eV for annealed films. The luminescence peak was observed at 419 nm corresponding to band to band emission. Finally, the current density-voltage (J-V) characteristic of ZnSe thin films based dye sensitized solar cells with the support from structural and optical studies revealed that the conversion efficiency strongly depends on the substrate temperature.