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首页> 外文期刊>Journal of materials science >Effect of BaTiO_3 doping on the structural, electrical and magnetic properties of BiFeO_3 ceramics
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Effect of BaTiO_3 doping on the structural, electrical and magnetic properties of BiFeO_3 ceramics

机译:BaTiO_3掺杂对BiFeO_3陶瓷的结构,电磁性能的影响

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摘要

(1 - x)BiFeO_3-xBaTiO_3 (x = 0.00, 0.10, 0.20, 0.25 and 0.30) ceramics have been fabricated by the solid state reaction method. The effects of BaTiO_3 (BTO) doping on the structural, electrical and magnetic properties of BiFeO_3 (BFO) ceramics have been investigated. It is found that BTO doping can affect the structure of the BFO ceramics, and the multiferroic properties of BFO ceramics can hence be improved. The XRD measurements reveal that the structure of BFO was changed from rhombohedral to pseudo-cubic and the impurity phases were decreased both due to BTO doping. Analysis of microstructure indicates that the BTO doping can hinder the grain growth. Electrical measurements show that BFO doping improves the ferroelectric property due to the significantly decrease of the electric leakage density and the oxygen vacancy concentrations. Magnetic measurements indicate that the antiferromagnetism behavior of BFO is turned into a weak ferromagnetism state by addition of BTO. The related mechanism is also discussed in the paper.
机译:已经通过固态反应方法制造了(1-x)BiFeO_3-xBaTiO_3(x = 0.00、0.10、0.20、0.25和0.30)陶瓷。研究了BaTiO_3(BTO)掺杂对BiFeO_3(BFO)陶瓷的结构,电学和磁学性能的影响。发现BTO掺杂可以影响BFO陶瓷的结构,因此可以改善BFO陶瓷的多铁性。 X射线衍射(XRD)测量表明,BFO的结构从菱形变为伪立方,杂质相均由于BTO掺杂而减少。微观结构分析表明,BTO掺杂会阻碍晶粒长大。电学测量表明,由于漏电密度和氧空位浓度的显着降低,BFO掺杂改善了铁电性能。磁性测量表明,通过添加BTO,BFO的反铁磁性行为变成了弱铁磁性状态。本文还讨论了相关机制。

著录项

  • 来源
    《Journal of materials science》 |2015年第6期|3717-3721|共5页
  • 作者单位

    School of Physics and Electronic Engineering, Zhengzhou University of Light Industry, Zhengzhou 450002, China;

    School of Physics and Electronic Engineering, Zhengzhou University of Light Industry, Zhengzhou 450002, China;

    School of Physics and Electronic Engineering, Zhengzhou University of Light Industry, Zhengzhou 450002, China;

    School of Physics and Electronic Engineering, Zhengzhou University of Light Industry, Zhengzhou 450002, China;

    School of Physics and Electronic Engineering, Zhengzhou University of Light Industry, Zhengzhou 450002, China;

    School of Physics and Electronic Engineering, Zhengzhou University of Light Industry, Zhengzhou 450002, China;

    School of Physics and Electronic Engineering, Zhengzhou University of Light Industry, Zhengzhou 450002, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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