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机译:Pb(In_(1/2)Nb_(1/2))O_3-PbTiO_3 / NiFe_2O_4双层层压复合材料中增强的自偏置正反磁电效应
Microwave Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India;
Microwave Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India;
Microwave Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India;
机译:纵向切割模式下具有最佳晶体切割效果的Terfenol-D / Pb(Mg_(1/3)Nb_(2/3))O_3-PbTiO_3层状复合材料的增强磁电效应
机译:Si衬底上生长的NiFe / Pb(Mg_(1/3)Nb_(2/3))O_3-PbTiO_3纳米复合薄膜中的逆磁电耦合
机译:Pb(Mg_(1/3)Nb_(2/3))O_3-PbTiO_3和Tb_(0.3)Dy_(0.7)Fe_(1.92)的双模双层复合材料中的共振逆磁电效应
机译:逆磁电效应在Pb(IN_(1/2)NB_(1/2))O_3-PBTIO_3 / NIFE_2O_4层压复合材料
机译:磁电层压复合材料和器件
机译:Li0.058(Na0.535K0.48)0.942NbO3 / Co0.6 Zn0.4Fe1.7Mn0.3O4复合材料的高居里温度和增强的磁电性能
机译:TbxDy1-xFe2-y合金与Pb(Mg1 / 3Nb2 / 3)(1-x)TixO3晶体层压复合材料的磁电和逆磁电响应