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首页> 外文期刊>Journal of materials science >Enhanced self-biased direct and converse magnetoelectric effect in Pb(In_(1/2)Nb_(1/2))O_3-PbTiO_3/NiFe_2O_4 bi-layer laminate composite
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Enhanced self-biased direct and converse magnetoelectric effect in Pb(In_(1/2)Nb_(1/2))O_3-PbTiO_3/NiFe_2O_4 bi-layer laminate composite

机译:Pb(In_(1/2)Nb_(1/2))O_3-PbTiO_3 / NiFe_2O_4双层层压复合材料中增强的自偏置正反磁电效应

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摘要

The direct magnetoelectric (DME) effect and converse magnetoelectric (CME) effect are investigated in bi-layer ferroelectric [0.65 Pb(In_(1/2)Nb_(1/2))O_3-0.35 PbTiO_3]-ferrite [NiFe_2O_4] laminate composite prepared by epoxy bonding. The magnetoelectric (ME) properties of bi-layer composite is studied at low frequency (1 kHz) and at electromechanical resonance frequencies under external bias field (H_(dc)). The laminate composite shows a DME coefficient (α_(DME)) and CME coefficient (α_(CME)) of 103 mV/ (cm Oe) and 0.04 (mG cm)/V respectively at 1 kHz with a H_(dc) of 110 Oe. Moreover the α_(DME) and α_(CME) shows nonzero value in the absence of external bias field, which signifies the presence of self-biased ME effect in this laminate composite. Under resonance condition, ME coupling enhanced two orders of magnitude compared to low frequency value. A large self biased α_(DME) of 8 V/(cm Oe) and α_(CME) of 5 (mG cm)/V is achieved at electromechanical resonance.
机译:研究了双层铁电[0.65 Pb(In_(1/2)Nb_(1/2))O_3-0.35 PbTiO_3]-铁氧体[NiFe_2O_4]层压复合材料的直接磁电(DME)效应和逆磁电(CME)效应。通过环氧粘合制备。在低频(1 kHz)和外部偏置电场(H_(dc))下的机电共振频率下研究了双层复合材料的磁电(ME)特性。层压复合材料在1 kHz时的DME系数(α_(DME))和CME系数(α_(CME))分别为103 mV /(cm Oe)和0.04(mG cm)/ V,H_(dc)为110大江此外,在没有外部偏置场的情况下,α_(DME)和α_(CME)显示为非零值,这表明该层压复合材料中存在自偏置的ME效应。在共振条件下,与低频值相比,ME耦合提高了两个数量级。在机电共振时,实现了8 V /(cm Oe)的大自偏置α_(DME)和5(mG cm)/ V的α_(CME)。

著录项

  • 来源
    《Journal of materials science》 |2015年第5期|2682-2687|共6页
  • 作者单位

    Microwave Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India;

    Microwave Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India;

    Microwave Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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