Effect of annealing temperature on dielectric and pyroelectric property of highly (111)-oriented (Pb_(0.98)La_(0.02))(Zr_(0.95)Ti_(0.05))_(0.995)O_3 thin films

摘要

Highly (111)-oriented lanthanum modified lead zirconate titanate (Pb_(0.98)La_(0.02))(Zr_(0.95)Ti_(0.05))_(0.995)O_3 thin films with the thickness of 300 nm were fabricated by a sol-gel method. Electrical measurements were conducted on (Pb_(0.98)La_(0.02))(Zr_(0.95)Ti_(0.05))_(0.995)O_3 thin films. Well-saturated hysteresis loops were achieved with an applied voltage of 19 V. Dielectric constant and dielectric loss as a function of frequency for (Pb_(0.98)La_(0.02))(Zr_(0.95)Ti_(0.05))_(0.995)O_3 thin films annealed at 670 ℃ were measured. Dc bias field dependence of dielectric constant and dielectric loss were conducted at room temperature; the dielectric tunability of (Pb_(0.98)La_(0.02))(Zr_(0.95)Ti_(0.05))_(0.995)O_3 thin film annealed at 670 ℃ was 20.3 %. The pyroelectric coefficient of films was measured by a dynamic technique. The pyroelectric coefficients of (Pb_(0.98)La_(0.02))(Zr_(0.95)Ti_(0.05))_(0.995)O_3 thin films annealed at 570, 620 and 670 ℃ were 208, 244 and 192 μC/m~2 K, respectively. It was found that the pyroelectric property was highly depended on the annealing temperature.