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Aligned arrays of CdS nanotubes for high-performance fully nanostructured photodetector with higher photosensitivity

机译:CdS纳米管的排列阵列,用于具有更高光敏性的高性能全纳米结构光电探测器

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摘要

We report a novel and simple method to fabricate a high-sensitivity fully nanostructured photodetector by using CdS nanotubes (NTs) aligned arrays as active layer and Ag nanowires (NWs) transparent film as electrodes. The assembly of highly ordered and aligned CdS NTs arrays is obtained by a simple modified contact printing process. A fully nanostructured photodetector is fabricated by transferring the electrodes produced by Ag NWs network on the aligned CdS NTs arrays substrate, such that the aligned CdS NTs arrays as active layer are in contact with Ag NWs network as transparent electrodes. The resulting photodetector exhibits lower dark currents (<5 nA) and a higher photoresponse ratio (I_(light)/I_(dark) ≈ 219, 321) than that based on aligned arrays of CdS NWs, and its photosensitivity characteristics are even comparable to those of single nanostructure-based devices. In addition, the comparative studies of aligned NTs-based photodetetor in air and vacuum are investigated. The effects of the oxygen molecules on the photocurrent, dark current, rise time and decay time are investigated in details. This research may pave a way for large-scale fabrication of high performance and low cost nanostructured photodetectors for industrial applications.
机译:我们报告了一种新颖而简单的方法,通过使用CdS纳米管(NTs)排列的阵列作为有源层和Ag纳米线(NWs)透明膜作为电极来制造高灵敏度的完全纳米结构的光电探测器。通过简单的修改后的接触印刷工艺即可获得高度有序和对齐的CdS NTs阵列。通过将由Ag NWs网络产生的电极转移到对准的CdS NTs阵列阵列基板上,从而使作为有源层的对准的CdS NTs阵列与作为透明电极的Ag NWs网络接触,来制造完全纳米结构的光电探测器。所得的光电探测器与基于CdS NW排列阵列的探测器相比,具有更低的暗电流(<5 nA)和更高的光响应比(I_(光)/ I_(暗)≈219、321),并且其光敏特性甚至可与那些基于单个纳米结构的设备。另外,还研究了在空气和真空中对准的基于NTs的光电检测器的比较研究。详细研究了氧分子对光电流,暗电流,上升时间和衰减时间的影响。这项研究可能为大规模制造高性能低成本工业用纳米结构光电探测器铺平道路。

著录项

  • 来源
    《Journal of materials science》 |2016年第11期|11952-11960|共9页
  • 作者

    Qinwei An; Xianquan Meng;

  • 作者单位

    Key Laboratory of Artificial Micro-and Nano-structures, Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, People's Republic of China,Center for Nanoscience and Nanotechnology School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, People's Republic of China;

    Key Laboratory of Artificial Micro-and Nano-structures, Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, People's Republic of China,Center for Nanoscience and Nanotechnology School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, People's Republic of China,Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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