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首页> 外文期刊>Journal of materials science >Dependence of microwave dielectric properties on site substitution in Ba_(3.75)Nd_(9.5)Ti_(18)O_54 ceramic
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Dependence of microwave dielectric properties on site substitution in Ba_(3.75)Nd_(9.5)Ti_(18)O_54 ceramic

机译：Ba_（3.75）Nd_（9.5）Ti_（18）O_54陶瓷中微波介电特性对位取代的依赖性

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摘要

Microwave dielectric properties of Ba_(3.75)(Nd_(1-x)Sm_x)_(9.5)Ti_(18-z)Al_(4z/3)O_(54)(0 ≤ x ≤ 0.4, 0 ≤ z ≤ 0.9) ceramic have been determined in this study. All samples showed a single tungsten-bronze like structure. Albeit dielectric constant was degraded by aluminum doping, the quality factor improved by 20 % and the temperature coefficient of resonant frequency decreased by 60 %. Based on this result, samarium replacement was implemented and improved microwave properties, including relative permittivity higher than 80, quality factor around 10,000 GHz and temperature coefficient of resonant frequency at the vicinity of zero, can be obtained. At last, with appropriate site-substitution content control (x = 0.2, z = 0.6), we gained a ceramic, with dielectric constant of 81, quality factor of 8650 GHz and temperature coefficient of resonant frequency of +3.8 ppm/℃, that possesses the potentials for radio frequency identification applications.
机译：Ba_（3.75）（Nd_（1-x）Sm_x）_（9.5）Ti_（18-z）Al_（4z / 3）O_（54）（0≤x≤0.4，0≤z≤0.9）的微波介电性能这项研究已经确定了陶瓷。所有样品均显示出单一的钨青铜状结构。铝掺杂虽然使介电常数降低，但品质因数提高了20％，谐振频率的温度系数降低了60％。基于此结果，实施了replacement替代，并获得了改善的微波性能，包括相对介电常数高于80，约10,000 GHz的品质因数和零附近的谐振频率温度系数。最后，通过适当的位取代含量控制（x = 0.2，z = 0.6），我们得到了陶瓷，介电常数为81，品质因数为8650 GHz，谐振频率温度系数为+3.8 ppm /℃，具有射频识别应用的潜力。

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  • 来源
    《Journal of materials science》 |2016年第10期|10951-10957|共7页
  • 作者

    Hetuo Chen; Zhe Xiong; Ying Yuan; Bin Tang; Shuren Zhang;

  • 作者单位

    National Engineering Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054,People's Republic of China,State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054,People's Republic of China;

    National Engineering Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054,People's Republic of China,State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054,People's Republic of China;

    National Engineering Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054,People's Republic of China,State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054,People's Republic of China;

    National Engineering Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054,People's Republic of China,State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054,People's Republic of China;

    National Engineering Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054,People's Republic of China,State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054,People's Republic of China;

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