Photo and electrical peculiarities of the nanostructured glass/ITO/AAO and glass/ITO/CdS systems

摘要

The systems of indium tin oxide (ITO)ano-porous anodized aluminum oxide Al_2O_3 (AAO) and ITO/ CdS nano-structured were fabricated on transparent glass substrates by using radio frequency magnetron sputtering and electrochemical deposition. The glass/ITO/AAO samples were transparent for visible light that make them useful and efficient for PV solar cell applications. The effect of annealing on optical and electrical properties of ITO thin films has been studied. It is found that, the transparency of the ITO films is directly proportional to the oxygen content of the plasma in the sputtering chamber and increased with annealing temperature, while the sheet resistance is inversely proportional to the annealing. In this work, it is found that, the electrochemically fabricated CdS thin films nanostructure of thickness of 200-500 nm is transparent and well absorbs the light over the wavelength wide ranged from 450 to 800 nm. Raman spectrum of CdS thin film obtained via backscattering geometry exhibits relatively sharp crystal-like peaks at 300 and 600 cm~(-1). The full width at half maximum value FWHM of Raman peak at the 300 nm is 40 cm~(-1).