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Effect of substrate temperature on the structural and optical properties of CdSe thin film deposited by electron beam evaporation technique

机译:衬底温度对电子束蒸发沉积CdSe薄膜结构和光学性能的影响

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摘要

Electron beam evaporated CdSe thin films were deposited on the micro-slide glass substrates at different temperatures. Studies on the influence of substrate temperature on the structural, optical, electrical and morphological properties of CdSe films were carried out. X-ray diffraction analysis revealed that the deposited films belong to the hexagonal phase with preferred growth along (002) plane. The crystallite size of the film was decreased with increase in the substrate temperature up to 250 ℃. The optical transmittance spectra showed that the film deposited at room temperature and 350 ℃ acquired relatively high transmittance in the visible region. Spherical ball like structures were formed on the surface of the film deposited at 150 ℃ and were modified as flake like structures when the substrate temperature was 250 and 350 ℃. Surface of the film deposited at 450 ℃ contains elongated hillock like structures. Elemental analysis revealed that the film deposited at 350 ℃ is near stoichiometric ratio. Electrical measurement study reveals that electrical properties vary with substrate temperature.
机译:在不同温度下,将电子束蒸发的CdSe薄膜沉积在微滑动玻璃基板上。研究了衬底温度对CdSe薄膜结构,光学,电学和形貌性质的影响。 X射线衍射分析表明,所沉积的膜属于六方相,并优选沿(002)面生长。随着基板温度升高至250℃,薄膜的微晶尺寸减小。光学透射光谱表明,在室温和350℃下沉积的薄膜在可见光区具有较高的透射率。在150℃沉积的薄膜表面形成球形球形结构,当基板温度为250和350℃时球形球形结构改性为片状结构。在450℃下沉积的薄膜表面含有细长的小丘状结构。元素分析表明,在350℃下沉积的薄膜接近化学计量比。电气测量研究表明,电气性能随基材温度而变化。

著录项

  • 来源
    《Journal of materials science》 |2016年第7期|7582-7588|共7页
  • 作者单位

    Crystal Growth and Thin Film Laboratory, Department of Physics and Nanotechnology, Faculty of Engineering and Technology, SRM University, Kattankulathur, Kancheepuram Dt., Tamil Nadu 603 203, India;

    Crystal Growth and Thin Film Laboratory, Department of Physics and Nanotechnology, Faculty of Engineering and Technology, SRM University, Kattankulathur, Kancheepuram Dt., Tamil Nadu 603 203, India;

    Crystal Growth and Thin Film Laboratory, School of Physics, Bharathidasan University, Tiruchirappalli, Tamil Nadu 620024, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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