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Low temperature co-fired Co_2Z barium-strontium ferrite materials with BBSC glass

机译:BBSC玻璃的低温共烧Co_2Z钡锶铁氧体材料

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摘要

In this paper, we prepared Co_2Z barium-strontium ferrite material (Ba_(1.5)Sr_(1.5)Co_2Fe_(24)O_(41)) with BBSC (Bi_2O_3-B_2O_3-SiO_2-CuO) glass by traditional solid state method. Using BBSC glass, the barium-strontium ferrite materials were successful synthesized in low temperature (920 ℃). The effects of BBSC upon microstructure and magnetic properties of materials were systematically investigated. BBSC glass promoted the single phase formation of Co_2Z ferrite and enhanced the densification of samples. With BBSC glass increased from 1 to 4 wt%, saturation magnetization (M_S) increased gradually from 36.5 to 50.3 emu/g, coercivity (H_C) decreased first and then increased, and magnetic permeability (μ') increased first and then decreased. The materials with 3 wt% glass possessed excellent performances, including M_S = 49.6 emu/g, H_C = 164 Oe, μ' = 7, and tan δ_μ was about 0.03.
机译:本文采用传统的固态法和BBSC(Bi_2O_3-B_2O_3-SiO_2-CuO)玻璃制备了Co_2Z钡锶铁氧体材料Ba_(1.5)Sr_(1.5)Co_2Fe_(24)O_(41)。使用BBSC玻璃,在低温(920℃)成功合成了钡锶铁氧体材料。系统地研究了BBSC对材料微观结构和磁性能的影响。 BBSC玻璃促进了Co_2Z铁氧体的单相形成并增强了样品的致密化。随着BBSC玻璃从1 wt%增加到4 wt%,饱和磁化强度(M_S)从36.5 emu / g逐渐增加,矫顽力(H_C)先降低然后升高,磁导率(μ')先升高然后降低。玻璃含量为3 wt%的材料具有优异的性能,包括M_S = 49.6 emu / g,H_C = 164 Oe,μ'= 7和tanδ_μ约为0.03。

著录项

  • 来源
    《Journal of materials science》 |2016年第3期|2841-2845|共5页
  • 作者单位

    School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China,School of Management and Economics, University of Electronic Science and Technology of China, Chengdu 610054, China;

    School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China;

    School of Management and Economics, University of Electronic Science and Technology of China, Chengdu 610054, China;

    School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China;

    School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China;

    School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China,National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, China;

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  • 正文语种 eng
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