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Fluorine-doped nanocrystalline ZnO powders prepared via microwave irradiation route as effective materials for photocatalyst

机译:微波辐射法制备的氟掺杂纳米ZnO粉体作为光催化剂的有效材料

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摘要

In this report, we have successfully synthesized nanocrystalline pure and F doped ZnO prepared by one-step microwave irradiation method without using any post annealing treatment. The effect of F dopant on structural, morphological and optical properties were systematically investigated by using powder X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), Raman spectra, UV-Vis absorption spectra and photoluminescence spectra analysis. XRD results reveals that both pristine and F doped ZnO had a hexagonal wurtzite type structure and the results are in good agreement with standard JCPDS data (card no. 36-1451). FESEM images showed that random platelets morphology with average diameter around 50-35 nm. A considerable red-shift in the absorption edge and decreasing the band gap of pure ZnO (3.32-3.12 eV) was confirmed though UV-Vis spectra. The defect in crystal and oxygen vacancy was analyzed through PL spectra analysis. The photocatalytic activities of the catalyst powders were evaluated by photocatalytic degradation of methyl violet (MV) and rhodamine B (RhB) and the results showed that the doping of F into ZnO nanoparticles could enhance photocatalytic activity compared to the undoped ZnO nanoparticles, this could be due to reduction of band gap and superior textural properties. The improved photocatalytic mechanism by F doping was also discussed in detail.
机译:在本报告中,我们成功地合成了通过一步微波辐照方法制备的纳米晶纯F掺杂的ZnO,而无需使用任何后退火处理。利用粉末X射线衍射(XRD),场发射扫描电子显微镜(FESEM),拉曼光谱,UV-Vis吸收光谱和光致发光光谱分析系统地研究了F掺杂剂对结构,形貌和光学性质的影响。 XRD结果表明,原始和F掺杂的ZnO均具有六方纤锌矿型结构,并且与标准JCPDS数据(卡号36-1451)非常吻合。 FESEM图像显示平均直径约50-35 nm的随机血小板形态。通过UV-Vis光谱确认了纯ZnO的吸收边缘发生了相当大的红移并减小了带隙(3.32-3.12 eV)。通过PL光谱分析来分析晶体中的缺陷和氧空位。通过甲基紫(MV)和若丹明B(RhB)的光催化降解来评估催化剂粉末的光催化活性,结果表明,与未掺杂的ZnO纳米颗粒相比,将F掺杂到ZnO纳米颗粒中可以增强光催化活性。由于带隙的减少和优异的质地特性。还详细讨论了通过F掺杂改善的光催化机理。

著录项

  • 来源
    《Journal of materials science》 |2017年第21期|16173-16180|共8页
  • 作者单位

    Department of Electronics, Nehru Arts and Science College, Coimbatore, Tamilnadu, India;

    Department of Physics, Paavai Engineering College (Autonomous), Namakkal, Tamilnadu, India;

    Research and Development Centre, Bharathiar University, Coimbatore, Tamilnadu, India;

    Department of Physics, Thiru Kolanjiappar Government Arts College, Vriddhachalam, Tamilnadu, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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