...
首页> 外文期刊>Journal of materials science >Very low loss tangent and giant dielectric properties of CaCu_3Ti_4O_(12) ceramics prepared by the sol-gel process
【24h】

Very low loss tangent and giant dielectric properties of CaCu_3Ti_4O_(12) ceramics prepared by the sol-gel process

机译:溶胶-凝胶法制备的CaCu_3Ti_4O_(12)陶瓷的损耗角正切和介电性能极好

获取原文
获取原文并翻译 | 示例

摘要

The pure phase of CaCu_3Ti_4O_(12) (CCTO) powder can be successfully synthesized by the sol-gel process. CCTO ceramic samples were synthesized at different sintering temperatures of 1015 and 1050 ℃ and sintering times of 8 and 10 h. X-ray diffraction results indicated a pure phase for all ceramic samples. Rietveld refinements were adopted for the calculation of lattice constants. Scanning electron microscopy micrographs revealed the effect of sintering conditions on the microstructural evolution of ceramic samples. X-ray absorption near edge spectroscopy was performed to determine the oxidation state of Cu and Ti ions in ceramic samples. The dielectric and non-linear current voltage properties of CCTO ceramic samples were systematically investigated. Interestingly, very low loss tangent (tanδ< 0.017 at 30 ℃ and 1 kHz) and giant dielectric constant (ε'~ 10,942) with temperature coefficients less than ±15% in a wide temperature range of -60 to 125 ℃ were obtained in the CCTO ceramic sample sintered at 1015 ℃ for 10 h (CCTO1-10). This suggests a potential use for CCTO1-10 sample in capacitor applications. All CCTO ceramic samples display non-linear characteristic with nonlinear coefficient (a) and breakdown field (E_b) values in the range of 5.69-11.02 and 1415-4294, respectively.
机译:CaCu_3Ti_4O_(12)(CCTO)粉末的纯相可以通过溶胶-凝胶法成功合成。在1015和1050℃的不同烧结温度和8和10 h的烧结时间下合成了CCTO陶瓷样品。 X射线衍射结果表明所有陶瓷样品均为纯相。 Rietveld改进用于计算晶格常数。扫描电子显微镜显微照片揭示了烧结条件对陶瓷样品微观结构演变的影响。进行近边缘光谱X射线吸收分析以确定陶瓷样品中Cu和Ti离子的氧化态。系统地研究了CCTO陶瓷样品的介电和非线性电流电压特性。有趣的是,在-60至125℃的宽温度范围内,获得了非常低的损耗正切(在30℃和1 kHz时tanδ<0.017)和巨大的介电常数(ε'〜10,942),温度系数小于±​​15%。 CCTO陶瓷样品在1015℃烧结10 h(CCTO1-10)。这表明电容器应用中CCTO1-10样品的潜在用途。所有CCTO陶瓷样品均显示非线性特性,其非线性系数(a)和击穿场(E_b)值分别在5.69-11.02和1415-4294之间。

著录项

  • 来源
    《Journal of materials science 》 |2017年第20期| 15033-15042| 共10页
  • 作者单位

    Integrated Nanotechnology Research Center (INRC) and Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen 40002, Thailand;

    Integrated Nanotechnology Research Center (INRC) and Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen 40002, Thailand;

    School of General Science, Faculty of Liberal Arts, Rajamangala University of Technology Rattanakosin, Wang Klai Kangwon Campus, Nakhon Pathom 77110, Thailand;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号