机译:硼硅氧烷硼扩散用于在n型硅晶片上形成p发射极
Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai, China;
Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai, China;
Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai, China;
Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai, China;
Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai, China;
Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai, China;
Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai, China;
机译:硼扩散P(+)层优化预测仿真框架:工业N型硅晶片太阳能电池硼管扩散工艺参数的灵敏度分析
机译:n型CZ硅片的磷扩散吸杂以改善硅异质结太阳能电池的性能
机译:通过硼在n型硅中扩散形成的富硼层的性质
机译:在硼扩散后获得的N型硅晶片上的高寿命
机译:钼(硅,硼)固溶体和多相钼-硅-硼合金的变形响应。
机译:室温下非接触式无损确定硅晶圆中局部硼扩散区的掺杂剂分布
机译:完整的太阳能电池工艺(包括硼扩散)后,N型多晶硅晶片的600μm出色的平均扩散长度
机译:O2 / NF3氧化过程中硼在硅中的扩散。 (重新公布新的可用性信息)。