Doping effect of Ta~(5+) ions on microstructure and electrical properties of BaTiO_3-(Bi_(0.5)Na_(0.5))TiO_3 ceramics with positive temperature coefficient of resistivity

摘要

Abstract Lead-free 0.912Ba0.97TiO3–0.088(Bi0.5Na0.5)TiO3–xTa2O5 (0 ≤ x ≤ 0.005) ceramics with positive temperature coefficient of resistivity (PTCR) were prepared by solid reaction sintering of high-purity metal oxides and carbonates reagents. The doping effect of Ta5+ ions on the microstructure and electrical properties of the samples was investigated. X-ray diffraction analysis indicated that all the samples were of a single tetragonal perovskite structure with the calculated c/a value first increased and then decreased with increasing x. The Raman shift at 305 cm−1 became strong firstly and then declined, and the broad band at 722 cm−1 narrowed initially and then broadened with the increase in Ta5+ content. The Curie temperature raised first and then decreased, presenting the highest value up to 170 °C for the samples with x = 0.001. Moreover, after the incorporation of Ta5+ ions, the PTCR (defined by the resistivity jump with the ratio of maximum to minimum ones) decreased first and then increased, presenting the best PTCR performance for the samples with x = 0.005. And with increasing x, the room temperature resistivity decreased first and then increased, displaying the lowest room temperature resistivity for the samples with x = 0.003.