机译:通过改变氧含量和位置来调节边缘氧化扶手椅石墨烯纳米带的电子性能
School of VLSI Technology, Indian Institute of Engineering Science and Technology (IIEST), Shibpur, Howrah 711103, India;
School of VLSI Technology, Indian Institute of Engineering Science and Technology (IIEST), Shibpur, Howrah 711103, India;
School of VLSI Technology, Indian Institute of Engineering Science and Technology (IIEST), Shibpur, Howrah 711103, India;
Department of Electronics and Telecommunication Engineering, Indian Institute of Engineering Science and Technology (IIEST), Shibpur, Howrah 711103, India;
机译:通过锂掺杂调整石墨烯氧化物纳米波纹的电子性质
机译:用化学边缘函数调整扶手椅石墨烯纳米波纹的芳香性图案和电子性质
机译:通过边缘氢化调节SnSe2扶手椅纳米带的电子和磁性
机译:用双刃窄扶手椅石墨烯纳米孔的电子性质
机译:扶手椅石墨烯纳米带的太赫兹非线性光学响应。
机译:过渡元素VCr和Mn修饰的扶手椅黑色磷纳米带的电子性能
机译:调整扶手椅石墨烯纳米带的电子结构 通过化学边缘修饰:理论研究