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The electronic properties of Aurum-doped with both-edge narrow armchair graphene nanoribbons

机译:用双刃窄扶手椅石墨烯纳米孔的电子性质

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The charge density, electronic energy band structure and density of states of Au-doped armchair graphene nanoribbons (AGNRs) with both-edge are investigated using the local density approximation based on density function theory. Our results indicate the charge density is transferred and mainly located on the Au atoms. The formation energy of Au-doped AGNRs is calculated for one-edge, both-edge and centre. So we predict that one-edge Au-doped AGNRs is an energetically favorable practice. The energy band structure shows extra bands at near Fermi level in the valence band, which is cause to promote conductivity. The project density of states is calculated and reveals that the localization and hybridization between C-2p, Au-6s, 6p,5d and H-1s electronic states are much stronger in the valence band and the conduction band group. A localization state is induced due to the absence of the bonding charge between Au and H atoms, which contributes to H-1s electronic states at -0.21 eV near the Fermi level. It causes Fermi level is crossed by the conduction band to make becoming metallic.
机译:采用基于密度函数理论,研究了使用局部密度近似的局部密度近似来研究与双边的Au掺杂扶手石墨烯纳米纳米纳米纳米杆(AGNR)的电荷密度,电子能带结构和密度。我们的结果表明电荷密度转移,主要位于Au原子上。 Au-掺杂的AGNR的形成能量是针对一边缘,双边缘和中心的。因此,我们预测,一埃边缘AU-掺杂的AGNR是一种能量上有利的做法。能带结构在价带附近的额外带额外的带,这是促进导电性的原因。计算各国的项目密度,并揭示了C-2P,AU-6S,6P,5D和H-1S电子状态之间的定位和杂交在价带和传导频带组中更强大。由于不存在Au和H原子之间的粘合电荷而引起定位状态,这有助于在Fermi水平附近的-0.21eV处有助于H-1S电子状态。它导致传导频带越过费米水平以使金属变成金属。

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