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Synthesis of Cu_2FeSnS_4 thin films with stannite and wurtzite structure directly on glass substrates via the solvothermal method

机译:溶剂热法直接在玻璃基板上合成锡矿结构和纤锌矿结构的Cu_2FeSnS_4薄膜

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摘要

Stannite and wurtzite Cu_2FeSnS_4 (CFTS) thin films were synthesized directly on glass substrates via the solvothermal method firstly. The solvent plays an important role in the formation and morphologies of two different CFTS phases. X-ray diffraction, Raman spectroscopy, scanning electron microscopy, UV-Vis-NIR absorbance spectroscopy measurement and Hall effect measurement show that the surface of stannite CFTS thin film is covered with large numbers of irregular particles while wurtzite CFTS thin film exhibits sphere-like particles. The stannite and wurtzite CFTS thin films show that the carrier con-cerntration is in the range of 10~(18)cm~(-3) and carrier mobility of about 4.602-21.98 cm~(-2) v~(-1) s~(-1). The band gaps of stannite and wurtzite CFTS thin films are determined to 1.3 and 1.34 eV, repectively, which are suitable as a substitute for thin film solar cells.
机译:首先通过溶剂热法在玻璃基板上直接合成了亚锡和纤锌矿型Cu_2FeSnS_4(CFTS)薄膜。溶剂在两个不同CFTS相的形成和形态中起重要作用。 X射线衍射,拉曼光谱,扫描电子显微镜,UV-Vis-NIR吸收光谱和霍尔效应测量结果表明,菱铁矿CFTS薄膜的表面覆盖有大量不规则颗粒,而纤锌矿CFTS薄膜呈球形。粒子。锡石和纤锌矿CFTS薄膜的载流子浓度在10〜(18)cm〜(-3)范围内,载流子迁移率约为4.602-21.98 cm〜(-2)v〜(-1) s〜(-1)。锡矿和纤锌矿型CFTS薄膜的带隙分别确定为1.3和1.34 eV,适合作为薄膜太阳能电池的替代品。

著录项

  • 来源
    《Journal of materials science》 |2017年第11期|7745-7748|共4页
  • 作者

    Haijun Hou; Hao Guan; Lei Li;

  • 作者单位

    School of Materials Engineering, Yancheng Institute of Technology, 9 Yinbing Street, Yancheng 224051,People's Republic of China;

    School of Materials Engineering, Yancheng Institute of Technology, 9 Yinbing Street, Yancheng 224051,People's Republic of China;

    School of Materials Engineering, Yancheng Institute of Technology, 9 Yinbing Street, Yancheng 224051,People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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