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Structural, optical and room temperature ferromagnetic properties of Sn_(1_x)Fe_xO_2 thin films using flash evaporation technique

机译:Sn_(1_x)Fe_xO_2薄膜的结构,光学和室温铁磁性能的快速蒸发技术

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摘要

Iron doped tin oxide thin films (Sn_(1_x)Fe_xO_2) at x = 0.00, 0.03, 0.05, 0.07,0.10 and 0.15 were prepared onto Corning 7059 substrates using flash evaporation technique and studied the effect of iron (Fe) doping concentration on structural, optical and magnetic properties of the prepared thin films. From the X-ray diffraction patterns, it was found that the Sn_(1_x)Fe_xO_2 thin films were poly-crystalline with tetragonal structure. The crystallite sizes of the films were calculated using Scherrer's relation and found that it was about 25 nm. The chemical composition and oxidation states of the elements were found using energy dispersive analysis of X-rays and X-ray photo-electron spectroscopy. From this it was confirmed that the Fe was substituted Sn sites and is in Fe~(+3)states. The optical band gap of the films decreased from 3.98 to 3.76 eV with increase of Fe doping concentration. The pure SnO_2 thin films exhibited diamagnetism whereas Sn_(1_x)Fe_xO_2 thin films exhibited ferromagnetism at room temperature. A magnetic (M_s), coercivity (Hci) and retentivity (M_r) were found to be 13.062 emu/cm3, 114.98 G, 7.487 x 10~(-6) emu/cm3, respectively Sn_(1_x)Fe_xO_2 thin films at x = 0.07.
机译:利用闪蒸技术在康宁7059衬底上制备了x = 0.00、0.03、0.05、0.07、0.10和0.15的铁掺杂氧化锡薄膜(Sn_(1_x)Fe_xO_2),并研究了铁掺杂浓度对结构的影响。 ,制备的薄膜的光学和磁性。从X射线衍射图可知,Sn_(1_x)Fe_xO_2薄膜是具有四方结构的多晶。使用Scherrer关系式计算膜的微晶尺寸,发现其为约25nm。元素的化学组成和氧化态是通过X射线能量色散分析和X射线光电子能谱发现的。由此证实,Fe被取代为Sn位并且处于Fe〜(+3)状态。随着Fe掺杂浓度的增加,薄膜的光学带隙从3.98eV降低到3.76eV。在室温下,纯SnO_2薄膜表现出反磁性,而Sn_(1_x)Fe_xO_2薄膜表现出铁磁性。磁性(M_s),矫顽力(Hci)和保持力(M_r)分别为13.062 emu / cm3、114.98 G,7.487 x 10〜(-6)emu / cm3,分别为x = 0.07。

著录项

  • 来源
    《Journal of materials science》 |2017年第3期|2976-2983|共8页
  • 作者单位

    Thin Films Laboratory, Centre for Crystal Growth, VIT University, Vellore 632014, Tamilnadu, India;

    Thin Films Laboratory, Centre for Crystal Growth, VIT University, Vellore 632014, Tamilnadu, India;

    Thin Films Laboratory, Centre for Crystal Growth, VIT University, Vellore 632014, Tamilnadu, India;

    Thin Films Laboratory, Centre for Crystal Growth, VIT University, Vellore 632014, Tamilnadu, India;

    Department of Electronics and Radio Engineering, Kyung Hee University, Yongin-si, Gyeonggi-do 441-701, South Korea;

    Department of Physics and Sungkyukwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwan 440746, Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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