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机译:通过优化极化温度增强PMN-PT / P [VDF-TrFE]厚膜的热电性能
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China;
机译:通过优化KNN烧结温度提高无铅KNN / P(VDF-TrFE)复合膜的热电性能
机译:通过优化极化条件提高0.69PZT-0.31PZNN厚膜的介电性能
机译:锰掺杂PZT增强复合厚膜的热电性能
机译:在室温和高温下电晕极化的单轴拉伸聚偏二氟乙烯薄膜的压电性能的优化
机译:用于压电传感器应用的PMN-PT厚膜的胶体加工。
机译:用于高频微加工超声换能器的硅基板上的PMN-PT单晶厚膜
机译:P(VDF-TrFE)和PCLT-P(VDF-TrFE)0-3纳米复合薄膜的介电和热电性质
机译:聚偏二氟乙烯热电特性热稳定性评价方法研究。