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首页> 外文期刊>Journal of materials science >Enhanced pyroelectric property of PMN-PT/P[VDF-TrFE] thick film by optimizing poling temperature
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Enhanced pyroelectric property of PMN-PT/P[VDF-TrFE] thick film by optimizing poling temperature

机译:通过优化极化温度增强PMN-PT / P [VDF-TrFE]厚膜的热电性能

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摘要

AbstractLead magnesium niobate–lead titanate (PMN–PT) ceramic powder and Poly[VinyliDeneFluoride-co-TriFluoroEthylene] (P[VDF–TrFE]) have been used to fabricate 0–3 composites thick films on ITO substrates by tape casting. The phase structure and grain size of PMN–PT were analyzed by XRD and SEM. The distribution of ceramic powder in polymer matrix was characterized by SEM. In order to find out the optimal poling temperature, dielectric-temperature spectrums of the composite films were measured to calculate the electric field applied to the ceramic phase (Ec). Finally, PMN–PT/P[VDF–TrFE] composite films were polarized by one-step polarization under optimized polarization temperature and their pyroelectric constant were compared with these of samples poled using conventional two-step polarization method. The results showed that the pyroelectric coefficient increases to 58.6 μC m−2 K−1at a ceramic mass fraction of 55% at the optimized polarizing temperature 110 °C.
机译: 摘要 铅铌酸镁-钛酸铅(PMN-PT)陶瓷粉和聚[VinyliDeneFluoride-co-TriFluoroEthylene ](P [VDF–TrFE])已用于通过流延在ITO基板上制造0–3复合厚膜。用XRD和SEM分析了PMN-PT的相结构和晶粒尺寸。用SEM对陶瓷粉末在聚合物基体中的分布进行了表征。为了找出最佳极化温度,测量了复合薄膜的介电温度谱,以计算施加到陶瓷相上的电场(E c )。最后,将PMN-PT / P [VDF-TrFE]复合膜在最佳极化温度下通过一步极化进行极化,并将其热电常数与使用常规两步极化方法极化的样品进行比较。结果表明,在最佳极化温度110 C下,陶瓷质量分数为55%时,热电系数增加到58.6μCm −2 K −1

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  • 来源
    《Journal of materials science》 |2018年第1期|271-276|共6页
  • 作者单位

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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