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首页> 外文期刊>Journal of materials science >Application of a ZnO UV sensor for a scintillation-type radiation detector
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Application of a ZnO UV sensor for a scintillation-type radiation detector

机译:ZnO紫外线传感器在闪烁型辐射探测器中的应用

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摘要

Radiation detection characteristics of a device combining a YAP:Ce (cerium-doped yttrium aluminum perovskite) scintillator and a ZnO UV sensor were studied using X-ray radiation. Both ZnO and YAP have high resistance to radiation. A photoconductive-type UV sensor with comb-shaped Al electrodes with a gap of 50 mu m was fabricated on the Zn-face of a nitrogen-doped ZnO single crystal. A photocurrent spectrum of the ZnO UV sensor showed a peak at wavelength of about 370 nm, and the sensor did not show a response in wavelengths of the visible light region. Scintillation characteristics of YAP:Ce were investigated under the condition of X-ray radiation. Scintillation luminescence of YAP:Ce showed a spectrum with a peak at a wavelength of about 360 nm, which almost corresponds to the peak wavelength of a photocurrent spectrum of the ZnO UV sensor. A device having a structure in which the YAP:Ce scintillator is placed above the ZnO UV sensor was fabricated. When the YAP:Ce scintillator was irradiated by X-rays, the photocurrent of the ZnO UV sensor was proportional to the X-ray intensity. The sensitivity of the device was improved by deposition of a reflective Al film on the YAP:Ce scintillator. The device using the combination of a YAP:Ce scintillator and a ZnO UV sensor can be used as a radiation detector with high radiation resistance.
机译:使用X射线辐射研究了结合YAP:Ce(掺铈钇铝钛矿钙钛矿)闪烁体和ZnO UV传感器的器件的辐射检测特性。 ZnO和YAP都具有很高的抗辐射性。在氮掺杂的ZnO单晶的Zn面上,制作出间隙为50μm的梳状Al电极的光电导型UV传感器。 ZnO UV传感器的光电流光谱在约370 nm的波长处显示一个峰值,并且该传感器在可见光区域的波长中未显示响应。在X射线辐射条件下研究了YAP:Ce的闪烁特性。 YAP:Ce的闪烁发光显示出在约360nm的波长处具有峰值的光谱,该光谱几乎对应于ZnO UV传感器的光电流光谱的峰值波长。制造具有以下结构的器件,其中将YAP:Ce闪烁体放置在ZnO UV传感器上方。当用X射线照射YAP:Ce闪烁体时,ZnO UV传感器的光电流与X射线强度成正比。通过在YAP:Ce闪烁体上沉积一层反射性的Al膜,可以提高设备的灵敏度。结合使用YAP:Ce闪烁体和ZnO UV传感器的设备可以用作具有高抗辐射性的辐射检测器。

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