首页> 外文期刊>Journal of materials science >Influence of Mg_2SiO_4 addition on crystal structure and microwave properties of Mg_2AlSi_5O_(18) ceramic system
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Influence of Mg_2SiO_4 addition on crystal structure and microwave properties of Mg_2AlSi_5O_(18) ceramic system

机译:Mg_2SiO_4的添加对Mg_2AlSi_5O_(18)陶瓷体系晶体结构和微波性能的影响

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摘要

In this work, (1 - x)Mg2Al4Si5O18-xMg(2)SiO(4) (x = 0-80 wt%) composite dielectric ceramics were prepared via traditional solid-state reaction. The results indicate the sinterability of Mg2Al4Si5O18 ceramics is greatly enhanced with the increasing content of Mg2SiO4 by reducing densified temperature from 1460 to 1340 A degrees C. Rietveld refinement analysis shows a great chemical compatibility between two phases. With the increase of Mg2SiO4 content, the densifications of ceramics can be improved. However, excessive amount of Mg2SiO4 induces abnormal grain growth, which deteriorates the microwave dielectric properties. At x = 50 wt%, low-epsilon(r) dielectric ceramics with high Q x f value was obtained when sintered at 1340 A degrees C: epsilon(r) = 5.73, Q x f = 76,374 GHz and tau(f) = - 24 ppm/ A degrees C. Relative cheap raw materials and adjustable permittivity values, which makes it promising for low-permittivity microwave applications.
机译:在这项工作中,通过传统的固态反应制备了(1-x)Mg2Al4Si5O18-xMg(2)SiO(4)(x = 0-80 wt%)复合介电陶瓷。结果表明,通过将致密化温度从1460 A降低到1340 A,随着Mg2SiO4含量的增加,Mg2Al4Si5O18陶瓷的可烧结性得到了极大的提高。Rietveld精炼分析显示出两相之间的良好化学相容性。随着Mg2SiO4含量的增加,陶瓷的致密性得到改善。然而,过量的Mg 2 SiO 4引起异常晶粒生长,这恶化了微波介电性能。在x = 50 wt%的情况下,在1340 A的温度下烧结可获得具有高Q xf值的低ε(r)电介质陶瓷:epsilon(r)= 5.73,Q xf = 76,374 GHz和tau(f)=-24 ppm / A摄氏度。相对廉价的原材料和可调节的介电常数值,这使其在低介电常数微波应用中很有前途。

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