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首页> 外文期刊>CERAMICS INTERNATIONAL >Effects of Al_2O_3 addition on the microstructure and microwave dielectric properties of Ba_4Nd_(9.33)Ti_(18)O_(54) ceramics
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Effects of Al_2O_3 addition on the microstructure and microwave dielectric properties of Ba_4Nd_(9.33)Ti_(18)O_(54) ceramics

机译:Al_2O_3添加量对Ba_4Nd_(9.33)Ti_(18)O_(54)陶瓷微观结构和微波介电性能的影响

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摘要

Ba_4Nd_(9.33)Ti_(18)O_(54) . x wt%Al_2O_3 (BNT-A) ceramics (x=0, 0.5, 1.0, 1.5, 2.0, 2.5) were prepared by the conventional solid state reaction. The effects of A1203 on the microstructure and microwave dielectric properties of Ba_4Nd_(9.33)Ti_(18)O_(54) (BNT) ceramics were investigated. X-ray diffraction and backscatter electronic images showed that the Al_2O_3 additive gave rise to a second phase BaAl_2Ti_5O_(14) (BAT). The formation mechanism and grain growth of the BAT phase were first discussed. Dielectric property test revealed that the Al_2O_3 additive had improved the dielectric properties of the BNT ceramics: increased the Q x f value from 8270 to 12,180 GHz and decreased the τ_f value from 53.4 to 11.2 ppm/°C. A BNT-A ceramic with excellent dielectric properties: ε_r=70.2, Q x f= 12,180 GHz, τ_f=20 ppm/°C was obtained with 2.0 wt% Al_2O_3 added after sintering at 1320 °C for 4 h.
机译:Ba_4Nd_(9.33)Ti_(18)O_(54)。通过常规的固态反应制备x重量%的Al_2O_3(BNT-A)陶瓷(x = 0、0.5、1.0、1.5、2.0、2.5)。研究了Al 2 O 3对Ba_4Nd_(9.33)Ti_(18)O_(54)(BNT)陶瓷的微观结构和微波介电性能的影响。 X射线衍射和反向散射电子图像表明,Al_2O_3添加剂产生了第二相BaAl_2Ti_5O_(14)(BAT)。首先讨论了BAT相的形成机理和晶粒长大。介电性能测试表明,Al_2O_3添加剂改善了BNT陶瓷的介电性能:将Q x f值从8270提高到12,180 GHz,并将τ_f值从53.4降低到11.2 ppm /°C。在1320°C烧结4 h后,添加2.0 wt%Al_2O_3,可制得具有优异介电性能:ε_r= 70.2,Q x f = 12,180 GHz,τ_f= 20 ppm /°C的BNT-A陶瓷。

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