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首页> 外文期刊>Journal of materials science >The effect of tantalum substitution on the microstructure and dielectric and piezoelectric properties of Pb_(0.99)(Zr_(0.95)Ti_(0.05))_(0.98)Nb_(0.02)O_3 ceramics
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The effect of tantalum substitution on the microstructure and dielectric and piezoelectric properties of Pb_(0.99)(Zr_(0.95)Ti_(0.05))_(0.98)Nb_(0.02)O_3 ceramics

机译:钽置换对Pb_(0.99)(Zr_(0.95)Ti_(0.05))_(0.98)Nb_(0.02)O_3陶瓷的微观结构及介电和压电性能的影响

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Lead zirconate titanate (PZT95/5) based piezoelectric ceramics with the compositions Pb-0.99(Zr0.95Ti0.05)(0.98)Ta0.02O3 (PZTT) and Pb0.99-0.5x(Zr0.95Ti0.05)(0.98-x)Nb0.02TaxO3 (PZTN), where x = 0.0, 0.005, 0.010, 0.015 and 0.020 were synthesized using conventional solid state sintering at 1250 A degrees C for 2 h in air. The effect of tantalum substitution on the microstructure, dielectric and piezoelectric properties of the samples were studied. The results showed that the Ta-doped samples had finer microstructures. The PZTT samples had microstructures with finer grains (average grain size of 3.80 A mu m) in comparison with the PZTN samples (average grain size of 5.33 A mu m). The relative densities of the PZTN and PZTT samples were approximately 94.1 and 94.4%, respectively. Moreover, the relative dielectric constant (epsilon(r)), piezoelectric coefficient (d(31)) and elastic compliance (S-11 (E)) of the samples reached the maximum values of 349, - 15.2 PC/N and 8.42 Pm-2/N, respectively at 1.5 mol% tantalum substitution. Furthermore, the relative dielectric constant (epsilon(r)), piezoelectric coefficient (d(33)) and voltage coefficient (g(33)) of the PZTN samples reached the optimal values of 306, 69 PC/N and 25.44 mV m/N, respectively, in comparison with the PZTT samples (329, 67 PC/N and 21.43 mV m/N, respectively). The results indicate that the tantalum doped PZT95/5 ceramics can be used for pulsed power devices.
机译:锆酸钛酸铅(PZT95 / 5)基压电陶瓷,其成分为Pb-0.99(Zr0.95Ti0.05)(0.98)Ta0.02O3(PZTT)和Pb0.99-0.5x(Zr0.95Ti0.05)(0.98- x)Nb0.02TaxO3(PZTN),其中x = 0.0、0.005、0.010、0.015和0.020使用常规的固态烧结方法在空气中于1250 A℃烧结2小时合成。研究了钽置换对样品的微观结构,介电和压电性能的影响。结果表明,掺Ta的样品具有更好的微观结构。与PZTN样品(平均粒径为5.33 Aμm)相比,PZTT样品的显微组织具有更细的晶粒(平均粒径为3.80 Aμm)。 PZTN和PZTT样品的相对密度分别约为94.1%和94.4%。此外,样品的相对介电常数(ε(r)),压电系数(d(31))和弹性柔度(S-11(E))达到最大值349,-15.2 PC / N和8.42 Pm -2 / N分别以1.5摩尔%的钽取代。此外,PZTN样品的相对介电常数(ε(r)),压电系数(d(33))和电压系数(g(33))达到了306、69 PC / N和25.44 mV m /的最佳值。与PZTT样本相比分别为N(分别为329、67 PC / N和21.43 mV m / N)。结果表明,掺杂钽的PZT95 / 5陶瓷可用于脉冲功率器件。

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