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首页> 外文期刊>Journal of materials science >Strong interface effect induced high-k property in polymer based ternary composites filled with 2D layered Ti_3C_2 MXene nanosheets
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Strong interface effect induced high-k property in polymer based ternary composites filled with 2D layered Ti_3C_2 MXene nanosheets

机译:强界面效应在填充二维二维Ti_3C_2 MXene纳米片的聚合物基三元复合物中诱导了高k性能

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摘要

High permittivity property is hard to achieve in the binary polymer based nanocomposites filled with wide-band-gap semiconductors unless substantial semiconductor fillers are introduced into polymer matrices. The overload of those semiconducting nanofillers usually results in the severe reduction of the mechanical and electric breakdown properties of the composite materials. In this work, the novel ternary polymer based nanocomposites were designed and further fabricated through adding a low concentration of 2D Ti3C2 MXene nanosheets into the binary polymer based nanocomposites containing alpha-SiC nanoparticles. In comparison with the binary composites, these ternary composites could exhibit the notably improved high permittivity properties due to significantly enhanced interface interaction from the introduction of MXene nanosheets. The desirable highly maintained comprehensive electrical properties and mechanical performances have been achieved in those ternary composites. This work might open the door to the large-scale preparation of promising high-permittivity nanocomposite dielectric materials based on building the ternary composite systems.
机译:除非将大量的半导体填料引入到聚合物基体中,否则在填充宽带隙半导体的二元聚合物基纳米复合材料中很难实现高介电常数。这些半导体纳米填料的过载通常导致复合材料的机械和电击穿性能的严重降低。在这项工作中,通过向包含α-SiC纳米颗粒的二元聚合物基纳米复合材料中添加低浓度的2D Ti3C2 MXene纳米片,设计并进一步制造了新型的基于三元聚合物的纳米复合材料。与二元复合材料相比,这些三元复合材料由于引入了MXene纳米片而显着增强了界面相互作用,因此可以表现出显着改善的高介电常数性能。在那些三元复合物中已经实现了理想的高度保持的综合电性能和机械性能。这项工作可能会为基于三元复合体系构建大规模制备有前途的高介电常数纳米复合介电材料打开大门。

著录项

  • 来源
    《Journal of materials science》 |2019年第10期|9106-9113|共8页
  • 作者单位

    Yangtze Normal Univ, Sch Mat Sci & Engn, Chongqing 408100, Peoples R China;

    Yangtze Normal Univ, Sch Mat Sci & Engn, Chongqing 408100, Peoples R China;

    Yangtze Normal Univ, Sch Mat Sci & Engn, Chongqing 408100, Peoples R China;

    Yangtze Normal Univ, Sch Mat Sci & Engn, Chongqing 408100, Peoples R China;

    Yangtze Normal Univ, Sch Mat Sci & Engn, Chongqing 408100, Peoples R China;

    Jiangxi Inst Fash Technol, Dept Fash Commun & Media, Nanchang 330201, Jiangxi, Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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