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首页> 外文期刊>Journal of materials science >Interface-induced d~0 ferromagnetism in undoped ZnO thin films grown on different oriented sapphire substrates
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Interface-induced d~0 ferromagnetism in undoped ZnO thin films grown on different oriented sapphire substrates

机译:在不同取向的蓝宝石衬底上生长的未掺杂ZnO薄膜中的界面感应d〜0铁磁性

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摘要

The origin of d(0) ferromagnetism in ZnO material still remains an open question. Here, we report a systematic study of the structural, optical, Raman and magnetic properties of undoped ZnO films grown on a-, c-, m- and r-plane sapphire substrates by radio frequency magnetron sputtering at room temperature. It is found that the polarity of the substrate does not affect the preferential growth of undoped ZnO film along the c-axis, but it will obviously affect the species and concentration of intrinsic defects in films, thereby regulating the optical and Raman properties of undoped ZnO films. Magnetic measurement reveals that all undoped ZnO films exhibit clear hysteresis loops at room temperature, confirming the presence of room temperature ferromagnetism. Furthermore, the relationship between intrinsic defects and magnetic properties was discussed, which suggests that the observed ferromagnetic order has nothing to do with the internal intrinsic defects in undoped ZnO films, but is derived from the interface effects between the undoped ZnO films and the substrates.
机译:ZnO材料中d(0)铁磁性的起源仍然是一个悬而未决的问题。在这里,我们报告了在室温下通过射频磁控溅射在a,c,m和r面蓝宝石衬底上生长的未掺杂ZnO膜的结构,光学,拉曼和磁性的系统研究。发现衬底的极性不会影响未掺杂的ZnO薄膜沿c轴的优先生长,但会明显影响薄膜中固有缺陷的种类和浓度,从而调节未掺杂的ZnO的光学和拉曼性能电影。磁性测量表明,所有未掺杂的ZnO薄膜在室温下均显示出清晰的磁滞回线,从而确认了室温铁磁性的存在。此外,讨论了固有缺陷与磁性能之间的关系,这表明观察到的铁磁有序与未掺杂的ZnO薄膜的内部固有缺陷无关,而是源自未掺杂的ZnO薄膜与基板之间的界面效应。

著录项

  • 来源
    《Journal of materials science》 |2019年第12期|11086-11093|共8页
  • 作者单位

    Chongqing Normal Univ, Coll Phys & Elect Engn, Chongqing Key Lab Photoelect Funct Mat, Chongqing 401331, Peoples R China;

    Chongqing Normal Univ, Coll Phys & Elect Engn, Chongqing Key Lab Photoelect Funct Mat, Chongqing 401331, Peoples R China;

    Chongqing Normal Univ, Coll Phys & Elect Engn, Chongqing Key Lab Photoelect Funct Mat, Chongqing 401331, Peoples R China;

    Chongqing Normal Univ, Coll Phys & Elect Engn, Chongqing Key Lab Photoelect Funct Mat, Chongqing 401331, Peoples R China|Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China;

    Chongqing Normal Univ, Coll Phys & Elect Engn, Chongqing Key Lab Photoelect Funct Mat, Chongqing 401331, Peoples R China;

    Chongqing Univ Arts & Sci, Res Inst New Mat Technol, Chongqing 402160, Peoples R China;

    Chongqing Normal Univ, Coll Phys & Elect Engn, Chongqing Key Lab Photoelect Funct Mat, Chongqing 401331, Peoples R China;

    Chongqing Normal Univ, Coll Phys & Elect Engn, Chongqing Key Lab Photoelect Funct Mat, Chongqing 401331, Peoples R China;

    Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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