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首页> 外文期刊>Journal of materials science >Effect of barium doping on the microstructure, dielectric and magnetic properties of GdMnO_3 multiferroic ceramics
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Effect of barium doping on the microstructure, dielectric and magnetic properties of GdMnO_3 multiferroic ceramics

机译:钡掺杂对GdMnO_3多铁陶瓷的微观结构,介电和磁性能的影响

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摘要

Undoped GdMnO3 (GMO) and Gd0.95Ba0.05MnO3 (GBMO) multiferroic ceramics were prepared by solid state reaction method, and the effects of Ba doping on the structure, morphology, dielectric and magnetic properties of GMO system were investigated. The XRD results show that the two samples yield single phase, and Ba doping induce structure distortion. The SEM images show that Ba doping can inhibit the grain growth. The XPS analysis indicates that more Mn4+ and oxygen vacancies are involved in the Ba doped GMO ceramics. Raman measurements show that Ba substitutes Gd into the lattice of GMO and induces lattice disorder. The dielectric measurements reveal that the Ba doped GMO exhibits the giant dielectric properties, but the dielectric loss of Ba doped samples is higher than that of the undoped samples. Temperature and magnetic field dependent magnetization measurements reveal that the low temperature magnetic behaviors of GMO system can be altered by Ba doping. The paramagnetic-antiferromagnetic transition temperature and magnetization of GMO system are decreased after Ba doping. In addition, Ba doping can also influence the long-range order of Gd moments at about 8K. The possible reasons for the above results are discussed.
机译:采用固态反应法制备了未掺杂的GdMnO3(GMO)和Gd0.95Ba0.05MnO3(GBMO)多铁陶瓷,研究了Ba掺杂对GMO体系的结构,形貌,介电和磁性能的影响。 XRD结果表明,两个样品均产生单相,Ba掺杂引起结构畸变。 SEM图像表明,Ba掺杂可以抑制晶粒长大。 XPS分析表明,Ba掺杂的GMO陶瓷涉及更多的Mn4 +和氧空位。拉曼测量表明,Ba将Gd代入GMO的晶格中,并诱发晶格混乱。介电测量表明,掺Ba的GMO表现出巨大的介电性能,但掺Ba的样品的介电损耗高于未掺杂的样品。温度和磁场相关的磁化测量表明,Ba掺杂可以改变GMO系统的低温磁性能。 Ba掺杂后降低了GMO系统的顺磁-反铁磁转变温度和磁化强度。此外,Ba掺杂也会影响大约8K时Gd矩的远距离顺序。讨论了产生上述结果的可能原因。

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  • 来源
    《Journal of materials science》 |2019年第3期|2523-2529|共7页
  • 作者单位

    Zhengzhou Univ Light Ind, Sch Phys & Elect Engn, Zhengzhou 450002, Henan, Peoples R China;

    Zhengzhou Univ Light Ind, Sch Phys & Elect Engn, Zhengzhou 450002, Henan, Peoples R China;

    Zhengzhou Univ Light Ind, Sch Phys & Elect Engn, Zhengzhou 450002, Henan, Peoples R China;

    Zhengzhou Univ Light Ind, Sch Phys & Elect Engn, Zhengzhou 450002, Henan, Peoples R China;

    Zhengzhou Univ Light Ind, Sch Phys & Elect Engn, Zhengzhou 450002, Henan, Peoples R China;

    Zhengzhou Univ Light Ind, Sch Phys & Elect Engn, Zhengzhou 450002, Henan, Peoples R China;

    Zhengzhou Univ Light Ind, Sch Phys & Elect Engn, Zhengzhou 450002, Henan, Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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