首页> 外文期刊>Journal of materials science >Graphenic nanosheets sandwiched between crystalline cakes of poly(3-hexylthiophene) via simultaneous grafting/crystallization and their applications in active photovoltaic layers
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Graphenic nanosheets sandwiched between crystalline cakes of poly(3-hexylthiophene) via simultaneous grafting/crystallization and their applications in active photovoltaic layers

机译:通过同时接枝/结晶夹在聚(3-己基噻吩)的结晶饼之间的石墨纳米片及其在活性光伏层中的应用

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摘要

Via simultaneous grafting and crystallization of regioregular poly(3-hexylthiophene) (P3HT) chains onto the reduced graphene oxide nanosheets, the cake-like P3HT crystalline layers sandwiched the nanosheets and sandG-cakeP3HT nano-hybrids were designed. The P3HT grafts directed the P3HT free-chains to vertically assemble onto the rGO-graft-P3HT and reach a flat-on orientation. Further red-shifting and peak intensification were also detected in respective ultraviolet-visible spectra (A(0-2) = 491, A(0-1) = 552, and A(0-0) = 602nm) and the conductivities of sandG-cakeP3HT nanostructures ranged in 10.13-10.29S/cm. The bandgap of sandG-cakeP3HT supramolecules [the highest occupied molecular orbital (HOMO) =-5.37eV, the lowest unoccupied molecular orbital (LUMO) = -3.48eV] was 1.89eV. A huge jump in the improvement of photovoltaic characteristics was achieved by newly developed sandG-cakeP3HT nano-hybrids. The P3HT:sandG-cakeP3HT photovoltaic devices led to the characteristics of 9.81mA/cm(2) (short circuit current density), 55% (fill factor), 0.66V (open circuit voltage) and 3.56% (efficiency). The addition of phenyl-C71-butyric acid methyl ester (PC71BM) also improved the properties to 11.48mA/cm(2), 60%, 0.67V and 4.61%. The external quantum efficiency measurements verified the influence of developed donor-acceptor nano-hybrids on the photovoltaic characteristics. The maximum peak values of 72-74% were detected at 560nm for P3HT:sandG-cakeP3HT:PC71BM devices.
机译:通过将规整的聚(3-己基噻吩)(P3HT)链同时接枝和结晶到还原的氧化石墨烯纳米片上,设计了夹在纳米片之间的蛋糕状P3HT晶体层,并设计了sandG-cakeP3HT纳米杂化物。 P3HT移植物指导P3HT自由链垂直组装到rGO-graft-P3HT上并达到平放方向。在各自的紫外-可见光谱(A(0-2)= 491,A(0-1)= 552和A(0-0)= 602nm)中还检测到进一步的红移和峰强度以及sandG的电导率-cakeP3HT纳米结构的范围为10.13-10.29S / cm。 sandG-cakeP3HT超分子的带隙[最高占据分子轨道(HOMO)= -5.37eV,最低未占据分子轨道(LUMO)= -3.48eV]为1.89eV。新开发的sandG-cakeP3HT纳米杂化材料在改善光伏特性方面实现了巨大飞跃。 P3HT:sandG-cakeP3HT光伏器件的特性为9.81mA / cm(2)(短路电流密度),55%(填充系数),0.66V(开路电压)和3.56%(效率)。苯基-C71-丁酸甲酯(PC71BM)的添加还将性能提高到11.48mA / cm(2),60%,0.67V和4.61%。外部量子效率的测量结果验证了已开发的供体-受体纳米杂化物对光伏特性的影响。对于P3HT:sandG-cakeP3HT:PC71BM器件,在560nm处检测到72-74%的最大峰值。

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  • 来源
    《Journal of materials science》 |2019年第7期|7018-7030|共13页
  • 作者单位

    Azarbaijan Shahid Madani Univ, Dept Chem Engn, Fac Engn, POB 5375171379, Tabriz, Iran;

    Azarbaijan Shahid Madani Univ, Dept Chem Engn, Fac Engn, POB 5375171379, Tabriz, Iran;

    Azarbaijan Shahid Madani Univ, Dept Chem Engn, Fac Engn, POB 5375171379, Tabriz, Iran;

    Payame Noor Univ, Dept Chem, POB 19395-3697, Tehran, Iran;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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