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首页> 外文期刊>Journal of materials science >Substrate temperature effect during the deposition of (Cu/Sn/Cu/Zn) stacked precursor CZTS thin film deposited by electron-beam evaporation
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Substrate temperature effect during the deposition of (Cu/Sn/Cu/Zn) stacked precursor CZTS thin film deposited by electron-beam evaporation

机译:电子束蒸发沉积(Cu / Sn / Cu / Zn)堆叠前驱体CZTS薄膜过程中的基板温度效应

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摘要

Kesterite-Cu2ZnSnS4 (CZTS) thin films were deposited on molybdenum (Mo) coated glass substrates using electron-beam evaporation from stacked layer precursor (Cu/Sn/Cu/Zn). Influence of substrate temperatures during the deposition on the morphological, optical and structural properties of CZTS thin films were investigated using FE-SEM, EDS, Raman, UV-Vis and XRD methods. X-ray diffraction studies revealed that CZTS films deposited at 310 degrees C possess kesterite structure with preferential growth along (112) plane. FE-SEM studies revealed that the surface of the CZTS film contains spherical shaped grains distributed on the surface, the surface becomes smooth and the grain size increases with increase of the substrate temperature. Size, shape, and distribution of the elements and their effect on the CZTS films surface were studied as a function of substrate temperature. With increase of substrate temperature, the band gap value of CZTS thin films reduce from 1.46 to 1.11eV. At 310 degrees C, Hall coefficient study showed that the CZTS film has p-type conductivity with low resistivity of 4.23cm. Solar cells were fabricated on a soda lime glass (SLG) substrate with the following structure SLG/Mo/Cu2ZnSnS4/CdS/i-ZnO Al:ZnO/Al. The optimized solar cell has a conversion efficiency of 2.4% with Jsc=12.5mA/cm(2), Voc=332mV and FF=58.0.
机译:使用电子束从堆叠层前体(Cu / Sn / Cu / Zn)蒸发,将Kesterite-Cu2ZnSnS4(CZTS)薄膜沉积在涂有钼(Mo)的玻璃基板上。采用FE-SEM,EDS,Raman,UV-Vis和XRD方法研究了沉积过程中衬底温度对CZTS薄膜形貌,光学和结构性能的影响。 X射线衍射研究表明,在310℃下沉积的CZTS薄膜具有沿(112)平面优先生长的硅藻土结构。 FE-SEM研究表明,CZTS膜的表面含有分布在表面的球形晶粒,表面变得光滑,并且晶粒尺寸随着基板温度的升高而增加。研究了元素的尺寸,形状和分布及其对CZTS薄膜表面的影响,它是衬底温度的函数。随着基板温度的升高,CZTS薄膜的带隙值从1.46降至1.11eV。在310摄氏度下,霍尔系数研究表明CZTS膜具有p型导电性,低电阻率为4.23cm。在具有以下结构SLG / Mo / Cu2ZnSnS4 / CdS / i-ZnO Al:ZnO / Al的钠钙玻璃(SLG)基板上制造太阳能电池。优化的太阳能电池的转换效率为2.4%,Jsc = 12.5mA / cm(2),Voc = 332mV,FF = 58.0。

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  • 来源
    《Journal of materials science》 |2018年第23期|20476-20484|共9页
  • 作者单位

    Univ Calif Riverside, Dept Chem, Riverside, CA 92521 USA;

    King Abdulaziz Univ, Dept Phys, Coll Sci, Judah 42806, Saudi Arabia;

    King Abdulaziz Univ, Ctr Nanotechnol, Judah 42806, Saudi Arabia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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