Deep center luminescence versus surface preparation of ZnSe single crystals

摘要

A close relationship between the photoluminescence emissions labeled Y and S, related to dislocations and extended structural defects, and the preparation of the surface state of ZnSe single crystals before PL (photoluminescence) measurements has been established. The samples were obtained by solid-phase recrystallization under different pressure conditions. An easy method for achieving good quality surfaces with a very significant reduction of such Y and S PL emissions is proposed.