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首页> 外文期刊>Journal of Materials Research >Growth behavior and microstructure of oxide scale formed on MOSi2 coating at 773 K
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Growth behavior and microstructure of oxide scale formed on MOSi2 coating at 773 K

机译:在773 K下在MOSi2涂层上形成的氧化皮的生长行为和微观结构

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Growth behavior and microstructure of oxide scale formed on MoSi2 coating by cyclic oxidation testing in air at 500 degreesC were investigated using field emission scanning electron microscopy, cross-sectional transmission electron microscopy, glancing angle x-ray diffraction, and x-ray photoelectron spectroscopy. MoSi2 coating was prepared by chemical vapor deposition of Si on a Mo substrate at 1100 degreesC for 5 h using SiCl4-H-2 precursor gas mixtures. After the incubation period of about 454 cycles, accelerated oxidation behavior was observed in MoSi2 coating and the weight gain increased linearly with increasing oxidation cycles. Microstructural analyses revealed that pest oxide scale was formed in three sequential processes. Initially, nanometer-sized crystalline Mo4O11 particles were formed with an amorphous SiO2 matrix at MoSi2 interface region. Inward diffusing oxygen reacted with Mo4O11 to form Mo9O26 nano-sized particles. At final stage of oxidation, MoO3 was formed from Mo9O26 with oxygen and growth of MoO3 took place forming massive precipitates with irregular and wavy shapes. The internal stress caused by the growth of massive MoO3 precipitates and the volatilization of MoO3 was attributed to the formation of many lateral cracks into the matrix leading to pest oxidation of MoSi2 coating.
机译:使用场发射扫描电子显微镜,横截面透射电子显微镜,掠射角X射线衍射和X射线光电子能谱研究了在500摄氏度的空气中通过循环氧化测试在MoSi2涂层上形成的氧化皮的生长行为和微观结构。 MoSi2涂层是通过使用SiCl4-H-2前体气体混合物在1100℃下在Mo基板上化学气相沉积Si 5小时而制备的。在大约454个循环的温育期后,在MoSi2涂层中观察到加速的氧化行为,并且重量增加随着氧化循环的增加而线性增加。微观结构分析表明,有害生物氧化皮是在三个连续过程中形成的。最初,在MoSi2界面区域形成了具有非晶SiO2基质的纳米级晶体Mo4O11颗粒。向内扩散的氧气与Mo4O11反应形成Mo9O26纳米级颗粒。在氧化的最后阶段,Mo9O26与氧气形成MoO3,MoO3的生长形成大量不规则和波浪形的沉淀。 MoO3的大量析出物的生长和MoO3的挥发引起的内应力归因于在基体中形成许多横向裂纹,导致MoSi2涂层的有害生物氧化。

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