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Microstructures and Growth of SiO2 scales formed on MoSi2

机译:MoSi2上形成的SiO2鳞片的微观结构和生长

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摘要

In advanced jet engines and gas turbines, development of ultra-high temperature structural materials is indispensable. Molybdenum disilicide (MoSi2) has a high melting point (2303 K) and a relatively low density (6.24 g/cm3), and it undergoes brittle-to-ductile transition at a temperature of about 1173 K, in addition to excellent resistance to oxidation at temperatures above 1073 K. Therefore, MoSi2 is a promising candidate material for ultra-high temperature applications. It is well known that the excellent resistance of MoSi2 to oxidation at temperatures above 1073 K is due to the formation of a protective SiO2 scale due to selective oxidation of Si. On the other hand, at low temperatures, especially at around 773 K, MoSi2 shows accelerated oxidation behavior due to simultaneous oxidation of Mo and Si.The microstructures of scales formed on MoSi2 at high temperatures in air were observed by TEM and crystallization of amorphous SiO2 scales was investigated. At 1273 K and 1373 K,the scales had a structure consisting of amorphous SiO2 with small amounts of fine MoO3 grains. The scales at 1573 K and 1773 K had a structure consisting of amorphous and crystalline SiO2. Growth rate of the scale formed at 1773 K appreciably increased with increase in the crystallization of amorphous SiO2. It was thought that the increase in the oxidation rate at 1773 K was caused by a change in the diffusion mechanism from O2 diffusion to lattice diffusion of O2- through SiO2. In addition, the diffusion coefficient of oxygen was estimated from the growth rate of SiOoxygen was estimated from the growth rate of SiO2 scale.
机译:在先进的喷气发动机和燃气轮机中,超高温结构材料的开发是必不可少的。二硅化钼(MoSi2)具有较高的熔点(2303 K)和相对较低的密度(6.24 g / cm3),并且除具有出色的抗氧化性外,还在约1173 K的温度下经历了脆性-延性转变在高于1073 K的温度下,MoSi2是超高温应用的有前途的候选材料。众所周知,MoSi2在1073 K以上的温度下具有出色的抗氧化性,这是由于Si的选择性氧化而形成的保护性SiO2氧化皮所致。另一方面,在低温下,特别是在773 K附近,由于Mo和Si的同时氧化,MoSi2表现出加速的氧化行为。通过TEM和非晶SiO2的结晶,观察了高温下在空气中MoSi2上形成的氧化皮的微观结构。秤进行了调查。在1273 K和1373 K时,氧化皮具有由无定形SiO2和少量MoO3细晶粒组成的结构。 1573 K和1773 K的氧化皮具有由非晶和结晶SiO2组成的结构。随着无定形SiO 2结晶的增加,在1773 K处形成的氧化皮的生长速率明显增加。据认为,在1773K下的氧化速率的增加是由于从O 2扩散到O 2到SiO 2的晶格扩散的扩散机理的变化引起的。另外,根据SiO 2氧化皮的生长速度来估计氧的扩散系数。

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