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首页> 外文期刊>Journal of Materials Research >Quantitative phase transformation behavior in TiNi shape memory alloy thin films
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Quantitative phase transformation behavior in TiNi shape memory alloy thin films

机译:TiNi形状记忆合金薄膜的定量相变行为

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Phase transformations in near-equiatomic TiNi shape memory alloy thin films were studied, and the phase fraction evolutions were quantitatively correlated to the stress and resistivity of the films. TiNi thin films with compositions of 50.1, 51.1, and 51.7 at.% Ti all exhibited transformation temperatures between 65 and 100 degreesC, low residual stresses at room temperature (RT), and high recoverable stresses, thus making them suitable for microactuators in microelectromechanical systems. Low residual stresses at RT, less than 50 MPa, can be obtained even when only a small quantity of martensite, less than 30%, is present. Phase fraction evolution during complete thermal cycles (heating and cooling) was studied using elevated temperature x-ray diffraction, combined with quantitative Rietveld analysis. R-phase always appeared in these near-equiatomic TiNi thin films during cooling but did not have a noticeable effect on the stress-temperature hysteresis curves, which mainly depend on the phase fraction evolution of martensite. On the other hand, the occurrence of R-phase determined the variation of film resistivity. Martensite, austenite, and R-phase coexisting within a single grain were observed using transmission electron microscopy.
机译:研究了近等原子TiNi形状记忆合金薄膜的相变,并将相分数的变化与薄膜的应力和电阻率定量相关。成分为50.1、51.1和51.7 at。%Ti的TiNi薄膜均表现出65至100摄氏度之间的转变温度,室温(RT)时的低残余应力和高可恢复应力,因此使其适用于微机电系统中的微致动器。即使仅存在少量的少于30%的马氏体,也可以在RT下获得低于50 MPa的低残余应力。使用高温x射线衍射结合定量Rietveld分析,研究了整个热循环(加热和冷却)过程中的相分数演变。在冷却过程中,R相总是出现在这些近等原子的TiNi薄膜中,但对应力-温度磁滞曲线没有显着影响,应力-磁滞曲线主要取决于马氏体的相分数演变。另一方面,R相的出现决定了膜电阻率的变化。使用透射电子显微镜观察到在单个晶粒内共存的马氏体,奥氏体和R相。

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