首页> 外国专利> PHASE TRANSFORMATION BEHAVIOR MEASURING METHOD WITH CONSIDERATION TO ACCOMMODATION BEHAVIOR OF POLYCRYSTALLINE SHAPE MEMORY ALLOY

PHASE TRANSFORMATION BEHAVIOR MEASURING METHOD WITH CONSIDERATION TO ACCOMMODATION BEHAVIOR OF POLYCRYSTALLINE SHAPE MEMORY ALLOY

机译:考虑多晶形记忆合金的适应行为的相变行为测量方法

摘要

PROBLEM TO BE SOLVED: To provide a measuring method of transformation strain of a shape memory alloy in the case where stress and temperature are specified.SOLUTION: A measuring method of transformation strain of a shape memory alloy comprises the steps of: describing accommodation behavior by representing a shape memory alloy as a parallel connection of crystals having different crystal orientations from one another and further dividing each crystal grain into partial elements; calculating elastic strain and stress of the each crystal grain from average transformation strain, to which the transformation strain of the each crystal grain becomes equal, of the partial elements; and calculating resolved shear stress of the each crystal grain in each transformation plane and defining that transformation occurs in order of value of the resolved shear stress. An expression of the stress is induced when strain and temperature are given by representing the above described step as an expression 1. An expression 5 for obtaining the strain is induced when the stress and the temperature are given by transforming the expression 1. By using the expression 5, the strain is calculated. However, since the transformation strain contained in the expression 5 is represented as a function of the strain, calculated values of the transformation strain are different from each other before and after calculation thereof if it is left as it is. In order to solve the above described problem the transformation strain is caused to converge by performing repeated calculations thereof.
机译:解决的问题:提供一种在指定应力和温度的情况下形状记忆合金的变形应变的测量方法。解决方案:形状记忆合金的变形应变的测量方法包括以下步骤:将形状记忆合金表示为具有彼此不同的晶体取向的晶体的平行连接,并且将每个晶粒进一步分成部分元素;根据各部分元素的平均相变应变,使各晶粒的相变应变相等,计算各晶粒的弹性应变和应力。计算在每个相变平面中每个晶粒的分辨剪切应力,并定义为按照分辨剪切应力的值顺序发生相变。当通过将上述步骤表示为表达式1来给出应变和温度时,诱导出应力的表达式。通过对表达式1进行变换而给出应力和温度时,诱导出用于获得应变的表达式5。表达式5,计算应变。然而,由于表达式5中包含的转变应变被表示为应变的函数,因此如果保持原样,则在其计算之前和之后,转变应变的计算值彼此不同。为了解决上述问题,通过重复计算来使相变应变收敛。

著录项

  • 公开/公告号JP2012098104A

    专利类型

  • 公开/公告日2012-05-24

    原文格式PDF

  • 申请/专利权人 OITA UNIV;

    申请/专利号JP20100244919

  • 申请日2010-11-01

  • 分类号G01N3/08;G01N33/20;

  • 国家 JP

  • 入库时间 2022-08-21 17:43:09

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