Properties of indium molybdenum oxide films fabricated via high-density plasma evaporation at room temperature

摘要

The goal of this study was to determine the scattering mechanisms and investigate the optoelectronic properties of indium molybdenum oxide (IMO) films. IMO films were deposited from an In_2O_3/MoO_3 target with a weight ratio of 99/1, 95/5 and 90/10 via high-density plasma evaporation at room temperature. Based on the structural, electrical and optical properties, this study proposed that the neutral complex [(2Mo_(In))O_i~'']~x dominated at high doping content and high oxygen content, whereas ionized complex Mo_(In) O_i~''] dominated at low doping level or low oxygen content. Uniform 99/1 IMO films with minimum resistivity of 3.56 X 10~(-4) OMETA cm (corresponding to a mobility of 14.6 cm~2V~(-1)s~(-1) and earner concentration of 14.3 X 10~(20) cm~(-3)) and average visible transmittance of approx 85 percent were produced at an optimum oxygen content of approx 9 percent. Average optical transmittance exceeding 80 percent was demonstrated, and a structural change appeared at low oxygen contents.