Piezoelectric, Ferroelectric Pb(mg_(1/3)nb_(2/3))o_3-pbtio_3 Thin Films With Compositions Around The Morphotropic Phase Boundary Prepared By A Sol-gel Process Of Reduced Thermal Budget

摘要

Single perovskite polycrystalline Pb(Mg_(1/3)Nb_(2/3))O_3-PbTiO_3 (PMN-PT) thin films with PMN to PT ratios around the morphotropic phase boundary composition (070PMN-0.30PT, 0.65PMN-0.35PT, and 0.60PMN-0.40PT) have been prepared by chemical solution deposition (CSD). Air-stable and precipitate-free PMN and PT precursor sols were separately synthesized, and PMN-PT sols were obtained by the simple mixture in air of the former. The PMN-PT sols were deposited onto Pt-coated Si substrates and dried on a hot-plate. Crystallization of the films was carried out by rapid thermal processing (RTP) in oxygen, using different temperatures, soaking times, and heating rates. Single perovskite PMN-PT thin films were obtained at low temperatures (650 ℃) with short soaking times (6s) and rapid heating rates (200 ℃/s). The films show a columnar growth and a uniform thickness. Both the evolution of the perovskite distortion and the electrical properties with the PMN to PT ratio indicate the correct formation of the solid solution. The temperature and frequency dependences of the permittivity and the ferroelectric loops also indicate an increase of the relaxor characteristic of the films as compared with bulk materials. Piezoelectric coefficients were measured across the ferroelectric loop by optical interferometry, and an enhancement of piezoelectricity at the MPB composition was found. A piezoelectric d_(33) coefficient of ～55 pC/N was measured in ～300-nm-thick films of this composition with a saturation polarisation of P_s ～25 μC/cm~2.