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Influence of MgO codoping on Er concentration in congruent LiNbO_3 crystal: Mg threshold concentration effect

机译:MgO共掺杂对全LiNbO_3晶体中Er浓度的影响:Mg阈值浓度效应

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摘要

Congruent Er:Mg:LiNbO_3 crystals were grown by the Czochralski method from the melts containing fixed 0.5 mol% Er_2O_3 while varied MgO content ranged from 0.0 to 8.0 mol%. The Mg and Er contents in the crystals were determined by neutron activation analysis. In the presence of Er codopant, the Mg threshold concentration with respect to optical damage is determined from the measured OH absorption spectra. The results show that the Er codopant has less effect on both the Mg threshold concentration and Mg segregation coefficient, which is within 1.13-1.23 as the Mg concentration is below the threshold while within 0.88-0.98 when above the threshold, consistent with the only MgO doping case. On the other hand, the practical Er concentration in the crystal is closely related to the Mg content and shows definite Mg threshold effect. Below the threshold, the Er concentration decreases linearly with the increased Mg concentration in the crystal; above the threshold, the decrease is more remarkable and follows another linear function. The Mg concentration effect on the Er segregation coefficient is discussed from the viewpoint of the Mg doping effect on the solubility of Er ions in the crystal.
机译:通过Czochralski法从含有固定的0.5mol%的Er_2O_3的熔体中生长出等价的Er:Mg:LiNbO_3晶体,同时MgO含量范围为0.0至8.0mol%。通过中子活化分析确定晶体中的Mg和Er含量。在co共掺杂剂的存在下,根据测得的OH吸收光谱确定相对于光学损伤的Mg阈值浓度。结果表明,Er掺杂剂对Mg阈值浓度和Mg偏析系数的影响较小,当Mg浓度低于阈值时,其在1.13-1.23之内,而高于阈值时则在0.88-0.98之内,与唯一的MgO一致。掺杂情况。另一方面,晶体中实际的Er浓度与Mg含量密切相关,并显示出确定的Mg阈值效应。低于阈值时,Er浓度随晶体中Mg浓度的增加而线性下降;高于阈值,则下降更为明显,并遵循另一个线性函数。从Mg掺杂对Er离子在晶体中的溶解度的影响的角度讨论了Mg浓度对Er偏析系数的影响。

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  • 来源
    《Journal of Materials Research》 |2010年第2期|235-239|共5页
  • 作者单位

    Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072. People's Republic of China Key Laboratory of Optoelectronics Information and Technical Science (Tianjin University). Ministry of Education, Tianjin 300072, People's Republic of China Department of Electronic Engineering, City University of Hong Kong, Kowloon, Hong Kong, People's Republic of China;

    Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, People's Republic of China;

    Department of Applied Chemistry, Harbin Institute of Technology, Harbin 150001, People's Republic of China School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, People's Republic of China;

    Department of Applied Chemistry, Harbin Institute of Technology, Harbin 150001, People's Republic of China School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, People's Republic of China;

    Department of Applied Chemistry, Harbin Institute of Technology, Harbin 150001, People's Republic of China School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, People's Republic of China;

    Department of Electronic Engineering, City University of Hong Kong, Kowloon, Hong Kong, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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