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首页> 外文期刊>Journal of Materials Research >Secondary ion mass spectrometry study of Ti~(~(4+)) diffusion properties in congruent Er:LiNbO_3 codoped with moderate concentration of MgO
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Secondary ion mass spectrometry study of Ti~(~(4+)) diffusion properties in congruent Er:LiNbO_3 codoped with moderate concentration of MgO

机译:二次离子质谱研究在中等浓度MgO共掺杂的Er:LiNbO_3的Ti〜(〜(4+))扩散特性

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摘要

At 1100 ℃, the diffusion properties of Ti~(4+) into congruent LiNbO_3 crystals codoped with 0.5 mol% Er_2O_3 and different MgO concentrations of 0.5, 1.0, and 1.5 mol% have been studied by secondary ion mass spectrometry (SIMS). Three Y-cut and three Z-cut plates with different Mg doping levels were coated with a 60-nm-thick Ti film at first and then annealed at 1100 ℃ for 28 h in a wet O_2 atmosphere. SIMS was used to analyze depth profile characteristics of diffused Ti ions and the constituent elements of the substrate as well. The results show that the diffusion reservoir was exhausted and the Ti metal film was completely diffused. All measured Ti profiles follow a Gaussian function. No Mg out-diffusion accompanied the Ti in-diffusion procedure for all crystals studied. The 1/e diffusion depth is similar to 8.3/10.2, 7.4/8.7, and 6.6/8.2 ± 0.2/0.2 μm/μm for the Y/Z-cut crystal with the Mg doping level of 0.5, 1.0, and 1.5 mol%, respectively, yielding a Ti~(4+) diffusivity of 0.62/0.93, 0.49/0.67, and 0.39/0.60 ± 0.03/0.03 (μm~2/h)/(μm~2/h), respectively. The diffusion shows definite anisotropy and a considerable MgO doping level effect. Under the same Mg doping level, the diffusion in a Z-cut crystal is faster. The diffusivity decreases with the increase of the Mg doping level. This effect is qualitatively explained from the viewpoint of the Mg doping effect on concentration of the intrinsic defects in LiNbO_3 crystal.
机译:通过二次离子质谱(SIMS)研究了Ti〜(4+)在掺有0.5 mol%Er_2O_3和0.5、1.0和1.5 mol%的MgO的LiNbO_3晶体中的扩散性能。首先,对三个镁掺杂量不同的Y形和三个Z形切割板进行60 nm厚的Ti膜涂覆,然后在湿O_2气氛中于1100℃退火28 h。 SIMS用于分析扩散的Ti离子的深度分布特征以及衬底的组成元素。结果表明,扩散容器已耗尽,Ti金属膜完全扩散。所有测得的Ti轮廓均遵循高斯函数。对于所有研究的晶体,没有Mg向外扩散伴随Ti扩散过程。对于Y / Z切割晶体,Mg掺杂水平为0.5、1.0和1.5 mol%的1 / e扩散深度类似于8.3 / 10.2、7.4 / 8.7和6.6 / 8.2±0.2 / 0.2μm/μm分别产生的Ti〜(4+)扩散系数分别为0.62 / 0.93、0.49 / 0.67和0.39 / 0.60±0.03 / 0.03(μm〜2 / h)/(μm〜2 / h)。扩散显示出一定的各向异性和相当大的MgO掺杂能级效应。在相同的镁掺杂水平下,Z切晶​​体中的扩散更快。随着Mg掺杂水平的增加,扩散率降低。从Mg掺杂对LiNbO_3晶体中本征缺陷浓度的影响来定性地解释该效应。

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  • 来源
    《Journal of Materials Research》 |2009年第10期|3057-3064|共8页
  • 作者单位

    Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, People's Republic of China Key Laboratory of Optoelectronics Information and Technical Science (Tianjin University), Ministry of Education, Tianjin, 300072, China and Department of Electronic Engineering, City University of Hong Kong, Kowloon, Hong Kong, People's Republic of China;

    Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, People's Republic of China and Key Laboratory of Optoelectronics Information and Technical Science (Tianjin University), Ministry of Education, Tianjin, 300072, China;

    School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, People's Republic of China;

    School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, People's Republic of China;

    Department of Electronic Engineering, City University of Hong Kong, Kowloon, Hong Kong, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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