...
首页> 外文期刊>Journal of Materials Research >Inclination-governed deformation of dislocation-type grain boundaries
【24h】

Inclination-governed deformation of dislocation-type grain boundaries

机译:倾斜的脱位型晶界的变形

获取原文
获取原文并翻译 | 示例
           

摘要

Grain boundaries (GBs) in polycrystalline materials are frequently curved, which differ from the well-documented planar GBs in terms of structure and dynamics. However, the physical origin of curvature-controlled GB deformation remains unclear. Here, combining in situ transmission electron microscopy (TEM) nanomechanical testing and atomistic simulation, we rationalize the fundamental influences of GB inclination on the deformation of curved dislocation-type GBs in face-centered cubic metals. Non-uniform motion of curved GB is revealed and attributed to the inclination-dependent dislocation configurations, which simultaneously change the energy and mobility of GBs. An inclination-governed GB model extending from the classic dislocation theory is further established via geometric analyses, where a universal inclination threshold of 35° is deduced to precisely predict the deformation behaviors of curved GBs. These findings enhance our mechanistic understanding of GB-mediated plasticity, shedding light on the structural design of metallic materials via precise GB engineering.
机译:多晶材料中的晶界(GBS)经常弯曲,其在结构和动态方面与文档良好的平面GB不同。然而,曲率控制的GB变形的物理来源仍不清楚。这里,与原位透射电子显微镜(TEM)纳米机械测试和原子模拟相结合,我们将GB倾斜度的基本影响合理化对面为中心立方金属中弯曲位错型GBS变形的基本影响。弯曲GB的不均匀运动被揭示并归因于依赖依赖性位错配置,其同时改变GB的能量和迁移率。通过几何分析进一步建立了从经典位错理论延伸的倾斜的GB模型,其中推导出35°的通用倾斜阈值以精确地预测弯曲GB的变形行为。这些发现提高了对GB介导的可塑性的机械理解,通过精确GB工程对金属材料的结构设计进行了脱落。

著录项

  • 来源
    《Journal of Materials Research》 |2021年第6期|1306-1315|共10页
  • 作者单位

    Center of Electron Microscopy and State Key Laboratory of Silicon Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310027 China;

    Center for X-Mechanics Department of Engineering Mechanics Zhejiang University Hangzhou 310027 China;

    Center for X-Mechanics Department of Engineering Mechanics Zhejiang University Hangzhou 310027 China;

    Center of Electron Microscopy and State Key Laboratory of Silicon Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310027 China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号