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机译:脉冲激光技术沉积在Al_2O_3(0001),Si(100)/ Pt(111)和Si(100)衬底上的六锶锶铁氧体薄膜的微观结构和磁性能的比较
Center of Excellence for Magnetic Materials, School of Metallurgy and Materials, College of Engineering, University of Tehran, Tehran, Iran,School of Materials Science and Engineering, Iran University of Science and Technology, Tehran, Iran;
Center of Excellence for Magnetic Materials, School of Metallurgy and Materials, College of Engineering, University of Tehran, Tehran, Iran;
Center for Superconducting and Magnetic Materials, Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542;
Strontium hexaferrite film; Al_2O_3(0001) substrate; Si(100) substrate; Pt(111) buffer layer; Perpendicular magnetic anisotropy;
机译:通过脉冲激光沉积在Al_2O_3(0001)和MgO(100)衬底上生长的MoB_2超导薄膜
机译:脉冲激光沉积制备的La-Co取代六锶锶铁氧体薄膜的微观结构和磁性
机译:GaN / AlGaN / GaN(0001)和Si(100)衬底对通过脉冲激光沉积生长的极薄MoS2薄膜的结构性能的影响
机译:ZnO:GaN膜对Si(111)和Si(100)基板上的脉冲激光沉积的比较
机译:氧化镁(100),铂(111)和碳(0001)/铂(111)的小正构烷烃的解吸动力学和钯纳米颗粒的研究:在氧化铝(0001)上生长和烧结以及在氧化镁上甲烷解离(100)。
机译:脉冲激光沉积制备6H-SiC(0001)衬底上VO2薄膜的增强的相变特性
机译:热蒸发和脉冲激光沉积技术在Nb衬底上沉积的Pb薄膜的性能比较