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The analysis of thermoluminescent glow peaks of copper doped ZnS thin films after β-irradiation

机译:β辐照掺杂铜的ZnS薄膜的热致发光峰分析

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摘要

In the given study, the thermoluminescence (TL) properties of copper (Cu)-doped ZnS thin films were investigated after β-irradiation at room temperature (RT). It was observed that the glow curve of this material has two broad TL peaks, in which one of them was centered at about 110℃ and the other at about 170℃ for a heating rate of 1℃ s~(-1) in the temperature range from RT to 350℃. The additive dose (AD), T_m(E_a)— T_(stop), repeated initial rise (RIR), variable heating rate (VHR) and computerized glow curve deconvolution (CGCD) methods were used to analyze its glow curves. These methods indicated that the glow curve of this material is the superposition of a number of first- and general-order glow peaks, or at least due to the distribution of traps. The dose responses and fading process of both peaks were also examined, and it was observed that the dose responses of both peaks have similar pattern. First they follow a good linearity with different slopes and then saturate at approximately same dose level (2kGy). The low-temperature broad peak nearly disappeared after 1 week storage in the dark at RT. On the other hand, the intensity of the high-temperature broad peak was approximately reduced to 50% of its original value. The TL emission spectrum of this material has two main emission bands, namely, the blue and green bands. The first glow peak emits predominantly in blue region, whereas the second glow peak in the green region.
机译:在给定的研究中,在室温(RT)进行β辐照后,研究了掺杂铜(Cu)的ZnS薄膜的热致发光(TL)特性。观察到该材料的辉光曲线有两个宽的TL峰,其中一个在温度为1℃s〜(-1)的加热速率下集中在110℃左右,另一个在170℃左右集中。室温至350℃。使用添加剂量(AD),T_m(E_a)-T_(停止),重复初始上升(RIR),可变加热速率(VHR)和计算机辉光曲线反褶积(CGCD)方法来分析其辉光曲线。这些方法表明,这种材料的辉光曲线是许多一阶和一般辉光峰的叠加,或者至少是由于陷阱的分布所致。还检查了两个峰的剂量响应和衰落过程,并且观察到两个峰的剂量响应具有相似的模式。首先,它们以不同的斜率遵循良好的线性,然后以大约相同的剂量水平(2kGy)饱和。在室温黑暗中保存1周后,低温宽峰几乎消失了。另一方面,高温宽峰的强度大约降低到其原始值的50%。这种材料的TL发射光谱有两个主要的发射带,即蓝色和绿色带。第一个辉光峰主要在蓝色区域发射,而第二个辉光峰在绿色区域发射。

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