Electroluminescence of Tb(o-BBA)_3(phen) based on an organic-inorganic heterostructure

摘要

An organic-inorganic heterostructure device was designed to improve the electroluminescence intensity of terbium ion. In this heterostructure, a mixed solution of (Tb(o-BBA)_3(phen)) and poly(N-vinylcarbazole) (PVK) was prepared with a weight ratio of 3:1 which was acted as a hole transporting and emitting layer. A wide band semiconductor zinc sulfide (ZnS) layer was used as an electron transporting and hole blocking layer. Characteristic emissions of terbium ion from the organic-inorganic heterostructure device were observed and the electroluminescence intensity of terbium ion increased abruptly when the driving voltage went beyond 20.5 V. This may be due to a directly impact excitation of terbium ion by hot electrons, accelerated in ZnS layer, and then a recombination with the injected holes. The electroluminescence mechanism of Tb(o-BBA)_3(phen)-doped PVK was the charge-carrier trapping process by the dopant molecule according to the emission spectra of PVK and the excitation spectra of Tb(o-BBA)3(phen).