Laser diodes integrated with butt-jointed spotsize converter fabricated on 2-in wafer

摘要

Laser diodes integrated with spotsize converters by butt-joint technology combined with selective area metal organic vapor phase epitaxial (MOVPE) growth have been successfully fabricated. Satisfactory uniformity, reproducibility (<99%) and tolerance for low threshold current, a narrow emitted beam, and low optical coupling loss to fiber (>-2.4 dB) are obtained by using 2-in full wafer fabrication technology in the experimental fabrication. To investigate the tolerance in fabrication, the characteristic dependence on the variation of the wet etching time just before the butt-joint MOVPE growth and also on the mesa stripe width are investigated. A wide tolerance for these fabrication parameters is confirmed. The results indicate that the butt-joint technology is a useful and reliable process for realizing spotsize converters of the present type and also suggest that the technology is widely applicable to various photonic integrated circuits.