首页>
外国专利>
WAFER CARRIER OF CHAMBER FOR GAS PHASE THIN FILM GROWTH IN FABRICATING LASER DIODE AND METHOD FOR GROWING CURRENT BLOCKING LAYER USING THE SAME
WAFER CARRIER OF CHAMBER FOR GAS PHASE THIN FILM GROWTH IN FABRICATING LASER DIODE AND METHOD FOR GROWING CURRENT BLOCKING LAYER USING THE SAME
展开▼
机译:制备激光二极管中气相薄膜生长的腔室晶圆载体及其使用相同方法生长电流阻挡层的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
PURPOSE: the gas phase membrane of chip carrier case is grown in manufacture laser diode and its manufacturing method and provides smooth flow processing gas by forming stable laminar flow afer rotates using the swelling current barrier layer. ;CONSTITUTION: chip carrier, which is mounted on, to be manufactured in gas phase membrane growth room laser diode. Wafer-load wafer W, wherein table top line (table top pipeline, M) formation. The chip carrier includes carrier body (100). There is wafer pocket in the side of carrier. The wafer pocket structure directing chip, the second direction are parallel to the carrier body of table top line clinometer direction of rotation. ;The 2010 of copyright KIPO submissions
展开▼