首页> 外国专利> WAFER CARRIER OF CHAMBER FOR GAS PHASE THIN FILM GROWTH IN FABRICATING LASER DIODE AND METHOD FOR GROWING CURRENT BLOCKING LAYER USING THE SAME

WAFER CARRIER OF CHAMBER FOR GAS PHASE THIN FILM GROWTH IN FABRICATING LASER DIODE AND METHOD FOR GROWING CURRENT BLOCKING LAYER USING THE SAME

机译:制备激光二极管中气相薄膜生长的腔室晶圆载体及其使用相同方法生长电流阻挡层的方法

摘要

PURPOSE: the gas phase membrane of chip carrier case is grown in manufacture laser diode and its manufacturing method and provides smooth flow processing gas by forming stable laminar flow afer rotates using the swelling current barrier layer. ;CONSTITUTION: chip carrier, which is mounted on, to be manufactured in gas phase membrane growth room laser diode. Wafer-load wafer W, wherein table top line (table top pipeline, M) formation. The chip carrier includes carrier body (100). There is wafer pocket in the side of carrier. The wafer pocket structure directing chip, the second direction are parallel to the carrier body of table top line clinometer direction of rotation. ;The 2010 of copyright KIPO submissions
机译:目的:在制造激光二极管及其制造方法中生长芯片载体壳体的气相膜,并在使用溶胀电流阻挡层旋转后形成稳定的层流,从而提供平滑的流动处理气体。 ;组成:芯片载体,其安装在气相膜生长室激光二极管中制造。晶圆装载晶圆W,其中台式线(tabletable pipe,M)形成。芯片载体包括载体主体(100)。载体侧面有晶圆袋。晶片袋结构导向芯片,第二方向平行于台式倾斜仪的载体的旋转方向。 ; 2010年版权KIPO提交文件

著录项

  • 公开/公告号KR20090109667A

    专利类型

  • 公开/公告日2009-10-21

    原文格式PDF

  • 申请/专利权人 LS CABLE LTD.;

    申请/专利号KR20080035031

  • 申请日2008-04-16

  • 分类号H01L21/673;H01S3/0941;

  • 国家 KR

  • 入库时间 2022-08-21 19:12:25

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号