High reliability low-threshold InGaAsP ridge waveguide lasers emitting at 1.3 mu m

摘要

The fabrication, performance, and reliability of InP/InGaAsP ridge waveguide lasers emitting at 1.3 mu m is described. The structure requires only one stage of planar wafer growth and simple fabrication steps and is therefore an inherently low-cost product. Threshold currents are typically 25-30 mA, and the external quantum efficiency is 20-25% per facet. Output power in the fundamental mode is maintained to above 10 mW, while total power in excess of 100-mW CW at 20 degrees has been obtained. The life test data have been fitted to a power-law drift model to predict long-term behavior and is consistent with total lifetimes in excess of 25 years. The device is eminently suited for applications in high-reliability high-capacity fiber-optic communications systems.