Investigation of inertness of photodischarge of two-layer organic photoreceptors

摘要

This article presents the experimental photodischarge kinetics and the theoretical investigations of a two-layer organic semiconductor photoreceptor construction that consists of a charge photogeneration layer (CGL) and a hole transport layer (CTL). The experimental results and the theoretical calculations indicate that hole transport in the CTL is significantly influenced by the hole localization in different local energy levels and that these energy levels are at least partly induced by the electric field. The calculated hole localization level density is (0.3 - 1.5) x 10(15) cm(-3) and the initial hole lifetime relative to localization under the conditions of this investigated, is close to initial transit time T-0. The time of hole liberation from a localized state is close to 10(-3) s, exceeding T-0 by several times, and therefore the hole localization in the CTL determines the inertness (potential discharge rate) of the photoreceptor.