机译:脉冲激光沉积后通过水热退火在较低的衬底温度下生长的TiAl 6 sub> V 4 sub>植入材料上的羟基磷灰石多晶涂层
Division of Mechanical Engineering, Cochin University of Science and Technology, Kalamassery, Kochi, Kerala, India;
Department of Physics, Coshin University of Science and Technology, Kochi, Kerala, India;
Division of Mechanical Engineering, Cochin University of Science and Technology, Kalamassery, Kochi, Kerala, India;
Neuro-Stem Cell Biology Laboratory, Neurobiology Division, Rajiv Gandhi Center for Biotechnology, Thiruvananthapuram, Kerala, India;
Department of Physics, Coshin University of Science and Technology, Kochi, Kerala, India;
hydrothermal; MTT assay; cell viability; bioactive; hydroxyapatite (HA);
机译:脉冲激光沉积后通过水热退火在较低的基板温度下生长的TiAl_6V_4植入材料上的羟基磷灰石多晶涂层
机译:通过脉冲激光沉积生长的掺镁和氟化物的羟基磷灰石涂层,以促进钛植入物的细胞相容性
机译:衬底温度和沉积后退火对脉冲激光沉积制备的Ga掺杂ZnO材料性能的影响
机译:用于多晶羟基磷灰石涂料的脉冲激光沉积
机译:用于植入物的改良氮化钛涂层的脉冲激光沉积工艺。
机译:衬底温度和氧分压对脉冲激光沉积生长纳米晶铜氧化物薄膜性能的影响
机译:通过脉冲激光沉积种植的镁和氟化物掺杂的羟基磷灰石涂层,用于促进钛植入性细胞组分