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Copper oxide nanosheets and nanowires grown by one-step linear sweep voltammetry for supercapacitor application

机译:通过一步线性扫描伏安法为超级电容器应用而生长氧化铜纳米液和纳米线

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Copper oxides nanosheets and nanowires were directly grown on a copper sheet by a single step voltammetry process in an alkaline solution. The transition from the out-of-plane nanosheets to high aspect ratio nanowires is triggered by the change in the voltage sweep rate. The scan rate changes the growth mechanism from nucleation and coarsening at the slow scan rate for nanosheets to an oriented oxide nanowire growth at high scan rates. Polycrystalline copper oxide nanostructures contain both Cu(I) and Cu(II) oxide phases, which were char-acterized by the FEG-SEM, XRD, XPS, Raman, and TEM analysis. The copper oxides nanosheets and nanowires electrodes delivered the maximum specific areal capacitance 320 mF cm(-2), energy density 3.36 mu Wh cm(-2) and, power density 1.7 mW cm(-2) with capacitance retention of 115% up to 5000 cycles. The process presents a simple, low cost and scalable option for the preparation of binder-free copper oxides nanowires and nanosheets electrodes for supercapacitor application.
机译:通过在碱性溶液中通过单步伏安法工艺直接在铜板上直接生长氧化铜纳米晶片。通过电压扫描速率的变化触发从平面外纳米片到高纵横比纳米线的过渡。扫描速率将生长机制从核切割和粗化以高扫描速率以纳米片的慢扫描速率粗糙化。多晶铜氧化物纳米结构含有Cu(I)和Cu(II)氧化物相,其被Feg-SEM,XRD,XPS,拉曼和TEM分析均为Char。铜氧化物纳米片和纳米线电极输送了最大特定的面积电容320mF cm(-2),能量密度为3.36μHCM(-2),电力密度1.7 mw cm(-2),电容保留为115% 5000周期。该方法具有简单,低成本和可伸缩的选择,用于制备无粘合剂的铜氧化物纳米线和用于超级电容器应用的纳米晶片电极。

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