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YSZ thin film nanostructured battery for on-chip energy storage applications

机译:YSZ薄膜纳米结构电池,用于片上储能应用

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Thin film solid-state batteries stand out as desired components to produce on-chip energy storage, sometimes known as 'power on a chip'. Multilayer structures have been tried for this purpose. The characteristics of both electrodes and the solid electrolyte require careful choice to meet this need. In this paper, we propose a thin-film battery using zirconia stabilized with yttria as the electrode separator and transition metal/oxides - here ruthenium oxide and gold - as electrodes. We show promising results, given that the objectives of merit (stored energy and energy density) compete with other cutting-edge thin film energy storage devices. While optimistic about the possibility of producing a usable battery, several technical problems remain to be solved. One of them is the operating temperature: in our prototype the peak performance is at 175 degrees C. We conclude that YSZ is able to fulfill the electrolytic task, since its ionic conduction, with a thickness of 50 nm, allows the oxidation-reduction reactions to be carried out in the ruthenium oxide layer; in this thickness their parasitic currents can be kept low.
机译:薄膜固态电池是所需的组件,它们可以产生片上能量存储,有时也称为“片上电源”。为此已经尝试了多层结构。电极和固体电解质的特性都需要仔细选择才能满足这一需求。在本文中,我们提出了一种薄膜电池,该电池使用以氧化钇稳定的氧化锆作为电极隔板,并使用过渡金属/氧化物(此处为氧化钌和金)作为电极。鉴于优点(存储的能量和能量密度)的目标可与其他尖端的薄膜能量存储设备竞争,因此我们显示出令人鼓舞的结果。尽管对生产可用电池的可能性感到乐观,但仍有一些技术问题有待解决。其中之一是工作温度:在我们的原型中,最高性能为175摄氏度。我们得出的结论是,YSZ能够完成电解任务,因为它的离子传导(厚度为50 nm)可以进行氧化还原反应在氧化钌层中进行;在这种厚度下,它们的寄生电流可以保持很低。

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