Damaqe Formation during 1.0 MeV Si Self- Implantation at Low Temperatures

摘要

The effect of substrate temperature and ion flux on lattice damage in silicon induced by 1.0 MeV Si ion implantation has been investigated using Rutherford backscattering channeling (RBSC) and Raman spectroscopy. Over the temperature range of 77--323K, the temperature, dependence of near-surface damage is found to be different from that of end-of range damage. This may suggest that different mechanisms for damage growth are dominant along the ion path. The flux effect on damage accumulation varies with substrate temperatures. Around liquid nitrogen temperature (77K), the near-surface damage decreases with increasing flux, contrary to the case around room temperature (300K). In the temperature range of ~ 120--250K, damage is almost independent of implant flux. Possible causes of the observed phenomena are discussed.